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GB/T 6624-2009Standard method for measuring the surface quality of polished silicon slices by visual inspection (English PDF)

硅抛光片表面质量目测检验方法

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

October 30, 2009

Implementation date

June 1, 2010

Scope

GB/T 6624-2009 is the English-translated version of 硅抛光片表面质量目测检验方法.

GB/T 6624-2009 sets out how the surface quality of polished silicon slices is judged by eye.

Clause 1 states that the standard specifies the visual inspection of the surface quality of single crystal polished slices, called polished in the text, under defined lighting conditions, that it applies to the surface quality inspection of silicon polished slices, and that the visual inspection of wafer surface quality may be carried out with reference to this method.

Clause 3 refers the terms of the standard to GB/T 14264, and clause 4, principle of the method, rests the method on the fact that surface quality defects on a polished silicon slice produce diffusely reflected light under certain lighting conditions and can therefore be seen and checked by eye.

Clause 5, equipment and appliances, calls for a high-intensity light source with an illumination of not less than 230000 lx, a large-area diffuse light source of adjustable fluorescent or creamy white light giving 430 lx to 650 lx at the detecting surface, a clean room of a class not less than 100, a purification station large enough to hold the test equipment and with a background illumination of 50 lx to 650 lx measured 230 mm from its front edge, a vacuum suction pen whose removable tip leaves no trace on the polished slice and introduces no defect, a light meter covering 0 lx to 330000 lx and a ruler accurate to not less than 1 mm.

Clause 6 has the sample drawn from washed polished slices according to the sampling plan or an agreed plan, and clause 7, test, opens with the test conditions: in the clean room the slice is held on its back by the vacuum suction pen with the polished face up and towards the light source, at a distance of 10 cm to 20 cm from it, with the angle alpha recommended at 45 degrees plus or minus 10 degrees and the angle beta at 90 degrees plus or minus 10 degrees, the arrangement of light source, slice and inspector being shown in a figure.

The draft version on the page breaks off at that point, so the rest of clause 7 is not shown. Clause 2 cites GB/T 14264.

The foreword records that the illumination required of the high-intensity light source was raised from not less than 16000 lx to not less than 230000 lx, that clean room class requirements were added, that the light meter range was widened to 0 lx to 330000 lx, that a length measuring tool was added and that the condition on the distance between the light source and the slice was changed.

It replaces GB/T 6624-1995, was issued on 2009-10-30 and has applied since 2010-06-01.

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Document preview — GB/T 6624-2009

National Standard of the People's Republic of China

ICS: 29.045
Classification: H 80
Replacing: GB/T 6624-1995

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Foreword
1 Scope
2 Normative references
3 Terms
4 Principle of the method
5 Equipment and appliances
6 Sample
7 Test

Foreword

This standard replaces GB/T 6624-1995 "surface quality of polished silicon slices by visual inspection." The standards are compared with the original standard was mainly the following changes.

--- Modify the aggregation of high intensity light source illumination requirements by not less than 16000lx to not less than 230000lx;

--- Increased cleanroom level requirements;

--- Expanding the light meter measuring range 0lx ~ 330000lx;

--- Increasing the length measurement tool;

--- Detect changes in distance between the light source and the wafer condition between the requirements.

1 Scope

This standard specifies under certain lighting conditions, using a single crystal polished visual inspection method (hereinafter referred to as polished) surface quality.

This standard applies to silicon polished surface quality inspection. Wafer surface quality visual inspection can be carried out with reference to the present method.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.

GB/T 14264 semiconductor material terms

3 Terms

The term of this standard should relate to comply with GB/T 14264 of.

4 Principle of the method

Polished silicon surface quality defects in certain lighting conditions can produce the diffuse reflected light, and can be visually observed, thus can visually check Test its surface defects.

5 Equipment and appliances

5.1 high-intensity light source aggregation. illumination of not less than 230000lx.

5.2 large area diffuse light source. fluorescent light intensity can be adjusted or creamy white light, the intensity of the light detecting surface of 430lx ~ 650lx.

5.3 clean room. clean room level should be consistent with the level of wafer surface particle detector is not less than 100.

5.4 purification station. size to accommodate testing equipment, purification level than 100 away from the cleaning station at the front edge 230mm background illumination 50lx ~ 650lx.

5.5 vacuum suction pen. removable suction tip clean, leaving no trace after contact with polished, without introducing any defects.

5.6 Light Meter. should be measured 0lx ~ 330000lx.

5.7 metric ruler. accuracy no less than 1mm

6 Sample

In accordance with the sampling plan or sampling plans agreed extracted from the polished sample after washing.

7 Test

7.1 Test conditions

7.1.1 In the clean room, vacuum suction pen sucked back of the polished wafers, the polishing side up, facing the light source. Light, polished and testing Person Is set as shown in FIG. Polished distance from the light source is 10cm ~ 20cm. alpha angle recommends 45 ° ± 10 °, beta angle is recommended 90 ° ± 10 °.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

Normative references

GB/T 14264Terminology of semiconductor materials

Cited by

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Editions of GB/T 6624

Edition	Title	Revision	Status
GB/T 6624-2009	Standard method for measuring the surface quality of polished silicon slices by visual inspection	current edition	Current
GB/T 6624-1995	Standard method for measuring the surface quality of polished silicon slices by visual inspection	previous edition	Superseded

This page sells the current edition, GB/T 6624-2009. Earlier editions are listed for reference only.

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