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GB/T 47902-2026Polished single-crystal diamond wafers (English PDF)

金刚石单晶抛光片

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

July 2, 2026

Implementation date

February 1, 2027

Scope

GB/T 47902-2026 is the English-translated version of 金刚石单晶抛光片.

GB/T 47902-2026 covers polished single-crystal diamond wafers. It sets the classification and grades, technical requirements, test methods and inspection rules, and also deals with marking, packaging, transport, storage, accompanying documents and the contents of an order.

The terms it defines include heat-sink grade, optical-grade and electronic-grade single-crystal diamond. It applies to the production, inspection and quality evaluation of polished single-crystal diamond wafers prepared by microwave plasma chemical vapour deposition (MPCVD).

Issued on 2 July 2026 and applicable from 1 February 2027. Its normative references include GB/T 1555, GB/T 2828.1-2012, GB/T 4339, GB/T 6618 and GB/T 14264.

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Document preview — GB/T 47902-2026

National Standard of the People's Republic of China

ICS
29.045
Classification
H 82

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • Foreword
  • 1 Scope
  • 2 Normative references
  • 3 Terms and Definitions

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents".

1 Scope

This document specifies the classification and grades, technical requirements, test methods, inspection rules, marking, packaging, and transportation of diamond single-crystal polished wafers. Storage and accompanying documents and order contents.

This document applies to the production, inspection, and quality control of polished diamond single-crystal wafers prepared by microwave plasma chemical vapor deposition (MPCVD). evaluate.

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.

For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies to this document.

GB/T 1555 Method for determining crystal orientation of semiconductor single crystals

GB/T 2828.1-2012 Sampling Procedures for Inspection by Attributes - Part 1: Lot-by-lot Inspection Sampling Indexed by Acceptable Quality Limit (AQL) plan

GB/T 4339 Determination of characteristic parameters of thermal expansion of metallic materials

GB/T 6618 Test method for thickness and total thickness variation of silicon wafers

GB/T 14264 Semiconductor Materials Terminology

GB/T 22588 Measurement of thermal diffusivity or thermal conductivity by flash method

GB/T 29505 Method for measuring surface roughness of flat surfaces of silicon wafers

GB/T 46227 Test method for transmittance of semiconductor single crystal materials

GB/T 47080 Test method for dislocation density of polished diamond single crystal wafers

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and the following terms and definitions apply to this document.

3.1 Heat-sink grade single-crystal diamond

High-performance heat-dissipating diamond single crystal material with high thermal conductivity and applied in the field of heat dissipation.

3.2 Optical-grade single-crystal diamond

Diamond single crystal materials with high visible and infrared optical transmittance are used in the fields of far-infrared and laser optics.

3.3 Electronic-grade single-crystal diamond

Diamond single crystal materials with very few defects, excellent crystal integrity and physicochemical properties are used in the field of electronic devices.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

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