GB/T 14264-2024Terminology of semiconductor materials (English PDF)

1 Scope

This document defines general terms and definitions for semiconductor materials, terms and definitions for materials preparation and processes, and defects, as well as abbreviations:

This document applies to the research and development, production, preparation and related fields of semiconductor materials:

2 Normative references

This document has no normative references:

3 General terms

3:1

Semiconductor

The conductivity is between that of a conductor and an insulator: The resistivity is about 10-5ohm·cm~1012ohm·cm at room temperature:

A solid that has two types of carriers, negatively charged electrons and negatively charged electrons, and has a negative temperature coefficient of resistance, photoconductivity effect, and rectification effect:

substance:

Note: Semiconductors are divided into single crystal, polycrystalline and amorphous according to their structure:

3:2

An ideal semiconductor whose lattice is complete and free of impurities, and in which the number of electrons and holes participating in conduction is almost equal under thermal equilibrium conditions:

Note: An intrinsic semiconductor is a semiconductor that contains only trace amounts of impurities and has electrical conductivity very close to that of an ideal semiconductor:

3:3

A semiconductor material composed of atoms of a single element:

Note: Such as silicon, germanium, diamond, etc:

3:4

A semiconductor material formed by two or more different elements in a certain atomic ratio:

Note: Gallium arsenide (GaAs), indium phosphide (InP), cadmium telluride (CdTe), silicon carbide (SiC), gallium nitride (GaN), gallium oxide (GaO), indium gallium nitride (InGaN) and

Aluminum gallium indium phosphide (AlGaInP), etc:

3:5

It is usually a semiconductor material with a bandgap of not less than 2:3 eV:

Note: Common wide bandgap semiconductor materials include silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), gallium oxide (beta-Ga2O3), diamond, aluminum nitride (AlN) etc:

3:6

Semi-insulating GaAs

Gallium arsenide single crystal with resistivity greater than 1×107ohm·cm:

Note: Used as substrate material for microelectronic devices: