GB/T 43612-2023Collection of metallographs on defects in silicon carbide crystal materials (English PDF)

1 Scope

This document specifies the morphological characteristics, causes and defect maps of conductive 4H silicon carbide (4H-SiC) crystal material defects:

This document is applicable to the research and development, production, testing and analysis of silicon carbide (ingots, substrate wafers, epitaxial wafers and subsequent processes) in the semiconductor industry:

link:

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text: Among them, the dated quotations

For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document:

GB/T 14264 Semiconductor material terminology

3 Terms and definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document:

3:1

Ingot defect ingotdefect

During the growth process of the 4H-SiC crystal ingot due to the extension of defects in the seed crystal itself, deviation from the stoichiometric ratio, internal stress of the crystal ingot, and impurities, resulting defects:

3:2 substratedefectsubstratedefect

Crystal defects or structural defects in the 4H-SiC substrate as well as defects left on the surface of the 4H-SiC substrate after cutting, grinding, and polishing:

3:3 epitaxialdefect epitaxialdefect

Crystal defects in the 4H-SiC epitaxial layer and the surface of the 4H-SiC epitaxial layer caused by the step flow controlled epitaxial growth method birth defects:

3:4

Deep energy level centers or extrinsic crystalline defects introduced into 4H-SiC crystals during device manufacturing or material modification processes:

3:5 crystallographic defectcrystalinedefect

Point, line, surface and volume defects in 4H-SiC crystal:

Note: Including point, line, surface and volume defects in 4H-SiC ingot and substrate, as well as point, line and surface defects in 4H-SiC epitaxial layer:

3:6

Due to the presence of foreign particles, substrate crystal defects, substrate surface polishing scratches, sub-damage layers, and epitaxial growth on the surface of the monocrystalline 4H-SiC substrate,

Regular or irregular shapes are formed on the surface of the 4H-SiC epitaxial layer under the step flow controlled growth mechanism due to long condition deviation and other reasons: