GB/T 29057-2023Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.

This document replaces GB/T 29057-2012 "Regulations on the evaluation of polycrystalline silicon rods using zone melting crystal pulling method and spectral analysis method" and is consistent with Compared with GB/T 29057-2012, in addition to structural adjustments and editorial changes, the main technical changes are as follows.

a) Purpose is deleted (see Chapter 1 of the 2012 edition);

b) Changed the scope (see Chapter 1, Chapter 2 of the 2012 edition);

c) Changed Chapter 3 "Limitations" to Chapter 5 "Interference Factors", and improved the content of interference factors (see Chapter 5, 2012 edition Chapter 3);

d) Changed the method summary (see Chapter 4, Chapter 6 of the 2012 edition);

e) Added requirements for seed crystals (see 6.6);

f) Added selection of sampling plans (see 9.8);

g) Changes in test data processing (see Chapter 12, Chapter 13 of the 2012 edition);

h) Changed the precision (see Chapter 13, Chapter 14 of the 2012 edition);

i) Keywords deleted (see Chapter 15 of the 2012 edition);

j) Added test report (see Chapter 14).

1 Scope

This document specifies the sampling of polycrystalline silicon rods, the melting and drawing of sample areas into single crystals, and the use of low-temperature infrared spectroscopy or photoluminescence spectroscopy.

Procedure for analyzing drawn single crystal silicon rods to determine the content of donors, acceptors, substituted carbon and interstitial oxygen impurities in polycrystalline silicon.

This document is applicable to the evaluation of rod-shaped polysilicon deposited and grown on silicon cores.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.

GB/T 620 Chemical Reagent Hydrofluoric Acid

GB/T 626 Chemical reagent nitric acid

GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials

GB/T 1551 Determination of resistivity of silicon single crystal. direct current four-probe method and direct current two-probe method

GB/T 1553 Photoconductivity decay method for determination of minority carrier lifetime in silicon and germanium bodies

GB/T 1554 Chemical preferential corrosion test method for silicon crystal integrity

GB/T 1555 Method for determination of crystal orientation of semiconductor single crystals

GB/T 1557 Infrared absorption measurement method for interstitial oxygen content in silicon crystals

GB/T 1558 Infrared absorption measurement method for substituted carbon atom content in silicon

GB/T 4842 Argon

GB/T 11446.1 Electronic grade water

GB/T 13389 Conversion procedures for resistivity and dopant concentration of boron-doped phosphorus-doped arsenic-doped silicon single crystal

GB/T 14264 Semiconductor material terminology

GB/T 24574 Photoluminescence test method for group III-V impurities in silicon single crystal

GB/T 24581 Determination of Group III and V impurity content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy

GB/T 25915.1 Clean rooms and related controlled environments Part 1: Classification of air cleanliness levels according to particle concentration

GB/T 35306 Determination of carbon and oxygen content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy

3 Terms and definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document.