GB/T 1558-2023Test method for substitutional carbon content in silicon by infrared absorption (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" drafting.

This document replaces GB/T 1558-2009 "Infrared absorption measurement method for substituted carbon atom content in silicon". Compared with GB/T 1558-2009, in addition to structural adjustments and editorial changes, the main technical changes are as follows:

a) Changed the scope (see Chapter 1, Chapter 1 of the 2009 edition);

b) Changes in terms and definitions (see Chapter 3, Chapter 3 of the 2009 edition);

c) The method principle has been changed (see Chapter 4, Chapter 4 of the 2009 edition);

d) The content of interference factors has been changed (see 5.2, 5.3, 5.4, 5.6, 5.2, 5.3, 5.4, 5.6 of the 2009 version), and the content of interference factors has been added: capacity (see 5.8, 5.9, 5.10, 5.11, 5.12, 5.13);

e) Added test conditions (see Chapter 6);

f) The requirements for instruments and equipment have been changed (see 7.2, 6.2 of the 2009 version), and the requirements for "window materials" and "thermometers" have been deleted (see 2009 version, 6.4, 6.5);

g) The sample has been changed (see Chapter 8, Chapter 7 of the 2009 edition);

h) The test procedures have been changed (see Chapter 9, Chapter 8 of the 2009 edition);

i) Changed the precision (see Chapter 11, Chapter 10 of the 2009 edition);

j) The test report has been changed (see Chapter 12, Chapter 11 of the 2009 edition);

k) Added Appendix A (see Appendix A).

1 Scope

This document describes the infrared absorption test method for the content of substituted carbon atoms in silicon.

This document is applicable to p-type silicon single-crystal wafers with a resistivity greater than 3 ohm·cm and n-type silicon single-crystal wafers with a resistivity greater than 1 ohm·cm: test of carbon atom content (test range at room temperature: 5 x 10^15cm-3 to the maximum solid solubility of carbon atoms in silicon; measured when the temperature is lower than 80K, test range: not less than 5 x 10^14cm-3).

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.

GB/T 8170 Numerical rounding rules and expression and determination of limit values

GB/T 8322 Molecular absorption spectrometry terminology

GB/T 14264 Semiconductor material terminology

GB/T 29057 Procedure for evaluating polycrystalline silicon rods using zone melting crystal pulling method and spectral analysis method

GB/T 35306 Determination of carbon and oxygen content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy

3 Terms and definitions

The terms and definitions defined in GB/T 14264 and GB/T 8322 and the following apply to this document.