GB/T 41652-2022Silicon electrode and silicon ring for plasma etching machine (English PDF)
刻蚀机用硅电极及硅环
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
July 11, 2022
Implementation date
February 1, 2023
Scope
GB/T 41652-2022 is the English-translated version of 刻蚀机用硅电极及硅环.
GB/T 41652-2022 is the Chinese national specification for the silicon electrodes and silicon rings fitted in plasma etching machines. It sets the technical requirements, the test methods, the inspection rules and the rules for marking, packaging, transportation and storage, and says what the shipment file and the order form must contain.
It applies to electrodes and rings 200 mm to 450 mm in diameter machined from p-type <100> Czochralski silicon single crystal, and it defines flatness as the difference between the greatest and the smallest thickness of the part.
The electrical parameters are set in Table 1. For the measurements it cites GB/T 1551 on resistivity, GB/T 1557 on interstitial oxygen and GB/T 29505 on surface roughness. Issued on 11 July 2022, it has applied since 1 February 2023.
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Document preview — GB/T 41652-2022
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 82
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Technical requirements
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents" drafted.
1 Scope
This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage and shipment of silicon electrodes and silicon rings for etching machines.
This document is applicable to silicon electrodes and silicon rings with a diameter of 200mm~450mm for etching machines processed by p< 100> Czochralski silicon single crystal.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document.
GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials
GB/T 1551 Determination of the resistivity of silicon single crystal - four-point probe method and two-point direct current method
GB/T 1554 Silicon Crystal Integrity Chemical Preferential Corrosion Inspection Method
GB/T 1555 Method for Determination of Crystal Orientation of Semiconductor Single Crystal
GB/T 1557 Infrared absorption measurement method of interstitial oxygen content in silicon crystals
GB/T 1558 Infrared Absorption Measurement Method of Substituted Carbon Atom Content in Silicon
GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers
GB/T 11073 Measurement method of radial resistivity change of silicon wafer
GB/T 14264 Terms of Semiconductor Materials
GB/T 29505 Surface roughness measurement method of flat surface of silicon wafer
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1 Flatness
The difference between the maximum value and the minimum value of the silicon electrode or silicon ring thickness.
4 Technical requirements
4.1 Electrical parameters
The electrical parameters of the silicon electrode and silicon ring should meet the requirements in Table 1.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 1550Test methods for conductivity type of extrinsic semiconducting materials
- GB/T 1551Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
- GB/T 1554Testing method for crystallographic perfection of silicon by preferential etch techniques
- GB/T 1555Test methods for determining the orientation of a semiconductive single crystal
- GB/T 1557Test method for determining interstitial oxygen content in silicon by infrared absorption
- GB/T 1558Test method for substitutional carbon content in silicon by infrared absorption
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Related Standards
GB/T 11073-2025 — Test method for measuring radial resistivity variation on silicon wafers
GB/T 14264-2024 — Terminology of semiconductor materials
GB/T 1550-2018 — Test methods for conductivity type of extrinsic semiconducting materials
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