GB/T 26071-2026Monocrystalline silicon and wafers for solar cells (English PDF)
太阳能电池用硅单晶及硅单晶片
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
January 28, 2026
Implementation date
August 1, 2026
Scope
GB/T 26071-2026 is the English-translated version of 太阳能电池用硅单晶及硅单晶片.
GB/T 26071-2026 is the Chinese national standard covering the silicon wafer a solar cell is made from - the resistivity and its uniformity, the oxygen and carbon, the minority carrier lifetime that sets the efficiency ceiling, and the dimensions and thickness that have kept shrinking. China makes almost every solar wafer in the world, and this is the standard they are made to. It replaces GB/T 26071-2018. It was issued on 28 January 2026 and has been in force since 1 August 2026, replacing GB/T 26071-2018. The document is under the responsibility of the Standardization Administration of China. This page is published from the official record of the 2026 edition; the clause text of a standard this recent is not yet in circulation, and the figures, limits and tables it contains are those of the document itself, delivered in full with the English translation.
Document preview — GB/T 26071-2026
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 82
- Replacing
- GB/T 26071-2018
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- 1 Scope
- 4 Brands and Classifications
- 4.2 Classification
- 5 Technical Requirements
- 5.3 Physical and chemical properties
- 5.7 External Dimensions
- 5.8 Surface Quality
- 6 Test Methods
- 7 Inspection Rules
- 7.1 Inspection and Acceptance
- 7.3 Inspection Items
- 7.4 Sampling
- 7.4.2 Silicon Wafer
- 7.5 Judgment of Test Results
- 7.5.1 Silicon Single Crystal
- 8 Marking, packaging, transport, storage and accompanying documents
- 8.2 Packaging, Transportation and Storage
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part
1.Structure and Drafting Rules of Standardization Documents". Drafting. This document supersedes GB/T 26071-2018 "Silicon Single Crystal Wafers for Solar Cells" and GB/T 25076-2018 "Silicon..." This document, "Single Crystal," is based on GB/T 26071-2018 and integrates the content of GB/T 25076-2018, except for structural adjustments and editorial changes. Aside from the changes, the main technical changes are as follows:
a) The scope of application has been changed (see Chapter 1, Chapter 1 of the.2018 edition);
b) The product sizes for quasi-square silicon wafers, namely "100.75mm, 125.75mm, 156I, 156II, 156III, 161.75mm", have been removed. 210.75mm" and square silicon wafer product sizes "100.75mm, 125.75mm, 156.75mm, 210.75mm" (see (2018 version 4.2.2)
c) Added quasi-square silicon wafer product sizes "166.00mm, 182.00mm" and square silicon wafer product sizes "182.00mm, 210.00mm" and rectangular silicon wafer product dimensions (see 4.2.2);
d) The requirement for crystal orientation in electrical properties has been removed (see
5.3 in the.2018 edition), and a requirement for dopant has been added (see 5.1);
e) An additional requirement for interstitial oxygen content has been added (see 5.3.1);
f) Added requirements for substitutional carbon content (see 5.3.2);
g) Added crystal integrity requirements (see 5.4);
h) The requirements for silicon wafer crystal integrity, oxygen content, and carbon content have been removed (see
5.1 in the.2018 version);
i) The geometric parameter requirements have been changed (see 5.5,
5.2.1 in the.2018 version);
1 Scope
GB/T 26071-2026 is the Chinese national standard covering the silicon wafer a solar cell is made from - the resistivity and its uniformity, the oxygen and carbon, the minority carrier lifetime that sets the efficiency ceiling, and the dimensions and thickness that have kept shrinking. China makes almost every solar wafer in the world, and this is the standard they are made to. It replaces GB/T 26071-2018. It was issued on 28 January 2026 and has been in force since 1 August 2026, replacing GB/T 26071-2018. The document is under the responsibility of the Standardization Administration of China. This page is published from the official record of the 2026 edition; the clause text of a standard this recent is not yet in circulation, and the figures, limits and tables it contains are those of the document itself, delivered in full with the English translation.
This document specifies the grades, classifications, and technologies of silicon single crystals (hereinafter referred to as "silicon single crystals") and silicon single crystal wafers (hereinafter referred to as "silicon wafers") for use in solar cells. Requirements, inspection rules, marking, packaging, transportation, storage, accompanying documents, and purchase order contents, along with descriptions of the corresponding test methods. This document applies to silicon single crystals prepared by the Czochralski method and silicon single-crystal wafers produced by the process.
4 Brands and Classifications
4.1 Brand The designation of silicon single crystals and silicon wafers shall comply with the provisions of GB/T 14844.
4.2 Classification
4.2.1 Silicon single crystals and silicon wafers are classified into two types according to their conductivity. p-type and n-type.
4.2.2 Silicon single crystal end faces and silicon wafers can be classified into three types according to their shape. quasi-square, square, and rectangular. The dimensions of quasi-square, square, and rectangular wafers should conform to... The provisions in Table 1 apply. Any other requirements shall be determined through negotiation between the supplier and the buyer.
5 Technical Requirements
5.1 Electrical Performance The electrical properties of silicon single crystals should conform to the specifications in Table
2.The resistivity range of silicon wafers should conform to the specifications in Table
2.Other requirements may apply. The specific timeframe shall be determined through negotiation between the supply and demand parties.
5.2 Crystal orientation and crystal orientation deviation The crystal orientation of silicon single crystals and silicon wafers is < 100>, and the deviation of the crystal orientation should not exceed 2°. The edge crystal orientation is < 100> ± 2°.
5.3 Physical and chemical properties
5.3.1 Interstitial oxygen content The interstitial oxygen content in p-type silicon single crystals and wafers should not exceed 1.0 × 10^18 cm^-3 (20 ppma), while the interstitial oxygen content in n-type silicon single crystals and wafers should not exceed 1.0 × 10^18 cm^-3 (20 ppma). The content should not exceed 9.0×10^17cm^-3 (18ppma), or be determined by negotiation between the supplier and the buyer.
5.3.2 Substitution carbon content The substitutional carbon content of p-type silicon single crystals and silicon wafers should not exceed 5.0 × 10^16 cm^-3 (1 ppma), and the substitutional carbon content of n-type silicon single crystals and silicon wafers should not exceed 5.0 × 10^16 cm^-3 (1 ppma). The quantity should not exceed 5.0 × 10^16 cm^-3 (1 ppma), or be determined through negotiation between the supplier and the buyer.
5.4 Crystal Integrity There should be no twins inside a silicon single crystal. The dislocation density of silicon single crystals and silicon wafers should not exceed 500 dislocations/cm2, and there should be no slip dislocations.
5.5 Geometric Parameters The geometric parameters of the silicon wafers shall conform to the specifications in Table
3.Any other requirements shall be determined through negotiation between the supplier and the buyer.
5.6 Verticality The perpendicularity between any two adjacent sides of a silicon single crystal and between any two adjacent sides of a silicon wafer is 90° ± 0.2°.
5.7 External Dimensions
5.7.1 Quasi-square silicon single crystal end face and silicon wafer dimensions The quasi-square silicon single crystal end face and the shape of the silicon wafer are shown in Figure
1.The dimensions should conform to the specifications in Table
4.If there are other requirements, they shall be determined by both the supplier and the buyer. The parties agreed upon this through consultation.
5.7.2 Square silicon single crystal end face and silicon wafer dimensions The square silicon single crystal end face and the shape of the silicon wafer are shown in Figure
2.The dimensions should conform to the specifications in Table
5.Any other requirements shall be determined by both the supplier and the buyer.
5.7.3 Rectangular silicon single crystal end face and silicon wafer dimensions The rectangular silicon single crystal end face and the shape of the silicon wafer are shown in Figure
3.The dimensions should conform to the specifications in Table
6.Any other requirements shall be determined by both the supplier and the buyer. The agreement was reached through negotiation.
5.8 Surface Quality
5.8.1 Silicon Single Crystal The surface and end faces (including the quasi-square chamfered surface) of silicon single crystals should be flat and smooth, free from obvious scratches, color differences, and dirt, and should not have cracks or defects. The total length of the chipped edge on the end face should not exceed 8mm.
5.8.2 Silicon Wafer The surface quality of silicon wafers should meet the requirements of Table 7.
6 Test Methods
6.1 The determination of conductivity type shall be performed in accordance with the provisions of GB/T 1550.
6.2 Resistivity determination shall be performed in accordance with GB/T 6616, or alternatively, GB/T 1551.Any disputes shall be subject to arbitration. When doing so, it shall be carried out in accordance with the provisions of GB/T 6616.
6.3 The radial resistivity change shall be determined by selecting points according to Scheme B specified in GB/T 11073-2007 or by negotiation between the supplier and the buyer.
6.4 The carrier recombination lifetime shall be determined in accordance with the provisions of GB/T 42907, or in accordance with the method agreed upon by the supplier and the buyer.
6.5 The determination of crystal orientation and crystal orientation deviation shall be performed in accordance with the provisions of GB/T 1555.
6.6 The determination of interstitial oxygen content shall be performed in accordance with GB/T 1557, and the calibration factor shall be 3.14×1017cm-3.
6.7 The determination of substitutional carbon content shall be performed in accordance with the provisions of GB/T 1558.
6.8 The determination of crystal integrity shall be performed in accordance with the provisions of GB/T 1554.
6.9 The determination of silicon wafer thickness and total thickness variation shall be performed in accordance with the provisions of GB/T 6618.
6.10 The determination of silicon wafer curvature shall be performed in accordance with the provisions of GB/T 6619.
6.11 The determination of silicon wafer warpage shall be performed in accordance with the provisions of GB/T 30859.
6.12 The perpendicularity of silicon single crystals and silicon wafers was measured using a digital angle gauge.
6.13 The determination of the edge length of silicon wafers shall be carried out in accordance with the provisions of SJ/T 11630.
6.14 Dimensions other than the edge length of the silicon wafer shall be measured using a vernier caliper with millimeter precision.
7.1 Inspection and Acceptance
7.1.1 The supplier shall inspect the products to ensure that the product quality meets the requirements of this document and the purchase order, and fill out a product quality guarantee certificate.
7.1.2 The buyer may inspect the received products in accordance with the provisions of this document. If the inspection results do not conform to the provisions of this document or the purchase order, the buyer shall be liable for compensation. In such cases, the supplier should be notified within 3 months of receiving the product, and the matter should be resolved through negotiation between the supplier and the buyer.
7.2 Batching Products are submitted for acceptance in batches. Each batch of silicon single crystals should consist of products of the same grade, same conductivity type (including doping type), and same external dimensions. Product composition. Each batch of silicon wafers should consist of products with the same external dimensions, the same conductivity type (including doping type), and the same resistivity range.
7.3 Inspection Items
7.3.1 Silicon Single Crystal Each batch of silicon single crystals should be tested for conductivity type, resistivity range, radial resistivity variation, carrier recombination lifetime, crystal orientation and crystal orientation deviation, and inter-phase conductivity. The oxygen content, substitutional carbon content, crystal integrity, perpendicularity, dimensions, and surface quality are inspected.
7.3.2 Silicon Wafer Each batch of silicon wafers must be inspected for resistivity range, geometric parameters, dimensions, and surface quality. The conductivity type and carrier recombination lifetime of the silicon wafers must also be considered. Whether the crystal's life, crystal orientation and deviation, interstitial oxygen content, substitutional carbon content, and crystal integrity need to be inspected shall be determined through negotiation between the supplier and the buyer.
7.4 Sampling
7.4.1 Silicon Single Crystal Sampling shall be conducted in accordance with the provisions of Table
8.Any other requirements shall be determined through negotiation between the supplier and the buyer.
7.4.2 Silicon Wafer
7.4.2.1 Except for conductivity type, carrier recombination lifetime, crystal orientation and deviation, interstitial oxygen content, substitutional carbon content, and crystal integrity. Project inspection sampling shall be conducted in accordance with the general inspection level II, normal inspection single sampling plan in GB/T 2828.1-2012, or by both the supplier and the buyer. The sampling plan determined through consultation will be implemented.
7.4.2.2 Sampling shall be conducted in accordance with the provisions of Table
9.Any other requirements shall be determined through negotiation between the supplier and the buyer.
7.5.1 Silicon Single Crystal
7.5.1.1 If any test result for conductivity type, carrier recombination lifetime, external dimensions, or surface quality fails to meet the requirements, the silicon single crystal is deemed unqualified. qualified.
7.5.1.2 Resistivity range, radial resistivity variation, crystal orientation and deviation, interstitial oxygen content, substitutional carbon content, and crystal integrity are determined using... Sampling inspection. If two or more samples out of four are found to be non-compliant, double the number of samples should be taken for repeated testing. If the test results still fail to meet the standards, the batch of silicon single crystals is deemed unqualified; if one or two out of three or fewer samples fail to meet the standards... If the sample fails to meet the standard, double the number of samples should be taken for repeated testing. If the repeated test results are still unqualified, the batch of products is deemed unqualified.
7.5.1.3 The determination of the surface quality inspection results shall be determined through consultation between the supplier and the buyer.
7.5.2 Silicon Wafer The Acceptable Quality Limit (AQL) for silicon wafers is shown in Table 10.
8 Marking, packaging, transport, storage and accompanying documents
8.1 Marking The product packaging box should be marked with words or symbols such as "Handle with care," "Fragile," "Prevent corrosion," and "Keep away from moisture," and should also indicate.
a) Supplier's name;
b) Product Name;
c) Product quantity.
8.2 Packaging, Transportation and Storage
8.2.1 Packaging Product packaging shall comply with the provisions of YS/T 28, or be determined by the supplier and the buyer through negotiation.
8.2.2 Transportation Products should be handled with care during transportation, and should not be thrown. Shockproof and moisture-proof measures should be taken.
8.2.3 Storage The product should be stored in a clean, dry environment.
8.3 Accompanying Documents Each batch of products should be accompanied by documentation stating.
a) Supplier's name;
b) Product name or brand;
c) Product batch number;
d) Product quantity;
e) All test results and the official seal of the testing department;
f) This document number;
g) Date of manufacture.
9.Order details The order form for the products listed in this document should include the following information.
a) Product Name;
b) Product requirements;
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Editions of GB/T 26071
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 26071-2026 | Monocrystalline silicon and wafers for solar cells | current edition | Current |
| GB/T 26071-2018 | Monocrystalline silicon and wafers for solar cells | previous edition | Superseded |
This page sells the current edition, GB/T 26071-2026. Earlier editions are listed for reference only.
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