YS/T 985-2014Polished reclaimed silicon wafers (English PDF)
硅抛光回收片
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
October 14, 2014
Implementation date
April 1, 2015
Scope
YS/T 985-2014 is the English-translated version of 硅抛光回收片.
YS/T 985-2014 — This standard specifies the polished silicon chip recovery requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and Order Manifest (or contract) content.
This standard applies to the user or a third party from recovering silicon sheet (including 100mm, 125mm, 150mm and 200mm single or double polished silicon wafer or epitaxial wafer unpolished) single-sided polished silicon wafers by polishing preparation.
Products are mainly used in machine Mechanical, furnace process, particles and lithography monitoring sheet. In addition, consumers should pay attention to the thermal history of the silicon chip recovery, body and surface sediment contamination Happening.
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Document preview — YS/T 985-2014
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 80
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This Standard specifies the recovered piece of silicon polishing requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and orders (or contract) content. This Standard applies to a user-supplied or r
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H80.
Estimated length of the Chinese original: 13,163 words.
Adopted international standard: SEMI M38-0307, MOD.
Standards quoted by this document
GB/T 1550; GB/T 1554; GB/T 1555; GB/T 1557; GB/T 1558; GB/T 2828.1; GB/T 4058; GB/T 6616; GB/T 6618; GB/T 6619; GB/T 6620; GB/T 6621; GB/T 6624; GB/T 11073; GB/T 12962; GB/T 12964; GB/T 13387; GB/T 13388; GB/T 14140; GB/T 14144; GB/T 14264; GB/T 14844; GB
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 9 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 1550Test methods for conductivity type of extrinsic semiconducting materials
- GB/T 1554Testing method for crystallographic perfection of silicon by preferential etch techniques
- GB/T 1555Test methods for determining the orientation of a semiconductive single crystal
- GB/T 1557Test method for determining interstitial oxygen content in silicon by infrared absorption
- GB/T 1558Test method for substitutional carbon content in silicon by infrared absorption
- GB/T 2828.1Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
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Related Standards
GB/T 11073-2025 — Test method for measuring radial resistivity variation on silicon wafers
GB/T 12962-2015 — Monocrystalline silicon
GB/T 12964-2018 — Monocrystalline silicon polished wafers
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YS/T 985-2014
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