GB/T 19921-2018Test method for particles on polished silicon wafer surfaces (English PDF)

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009.

This standard replaces GB/T 19921-2005 "Test method for surface particles of silicon polishing sheet", compared with GB/T 19921-2005, except for editing The main technical changes outside the series are as follows.

--- Revised the scope of application (see Chapter 1, Chapter 1 of the 2005 edition).

--- Static references have removed ASTMF1620-1996, ASTMF1621-1996 and SEMIM1-0302, added

GB/T 6624, GB/T 12964, GB/T 12965, GB/T 14264, GB/T 25915.1, GB/T 29506, SEMI M35, SEMIM52, SEMIM53, and SEMIM58 (see Chapter 2, Chapter 2, 2005).

--- The terms and definitions have been removed from the distribution map, highlight defects, missing counts, micro-roughness, repeatability, reproducibility, scratches, and increased Crystal native pit, false count rate, cumulative false count rate, rate of change level, static method, dynamic method, matching tolerance, standard Definition of quasi-mechanical interface system and revision of some existing terminology according to GB/T 14264 (see Chapter 3, 2005) Chapter 3 of the edition).

--- The method summary adds test principles for local light scatterers, extended light scatterers, and crystal native pits and fog (see 4.1). 4.3, 4.4, 4.5).

--- According to the use of test methods, increased interference factors affecting test results (see 5.2, 5.4, 5.10, 5.12, 5.13, 5.14, 5.16, 5.19, 5.20, 5.21, 5.23).

---Modified test equipment, clearly divided into wafer clamping loading system, laser scanning and signal collection system, data analysis, processing, transmission Transmission systems, operating systems and mechanical systems (see Chapter 6, Chapter 6 of the 2005 edition).

--- Added "test environment", the description of the environment in the original standard method overview is listed as Chapter 7 (see Chapter 7, 2005 edition) Chapter 4).

--- Added reference to the "pit" and "scratch" reference samples in the sample (see 8.10, 8.11).

--- "In addition to the reference sample of the above deposited polystyrene latex ball, the qualified user can choose the scanning surface inspection system.

A reference sample for determining the accuracy of the bit. For details, see Chapter 8 Reference Samples in ASTMF121-96.

Select a sample with a valid certificate as a reference sample, and the reference sample should conform to the SEMIM53 regulations (see 8.1, 2005). Version 7.9).

--- Refined the procedure for calibrating the scanning surface inspection system using the reference sample (9.2), adding 9.3 to confirm by repeating the calibration Requirements for the stability of the system; Added 9.4 "Testing the Scan Surface Inspection System under static or dynamic method conditions Requirements for XY Coordinate Uncertainty; an increase of 9.5" to evaluate the false count of the scanning surface inspection system Test system capture rate, standard deviation of latex sphere size, false count rate and cumulative false count rate requirements; in 9.6 The comparison of the test results before and after the equipment calibration increases the "conditional comparison of multiple scanning surface inspection systems.

And carry out matching tolerance calculation"; added 9.7 "Recommended to use the reference sample of the pit or scratch size in 8.10, 8.11 The pits and scratches on the surface of the van wafer. It is also possible to save the relevant standard model in the software of the scanning surface inspection system" Rong (see Chapter 9, Chapter 8 of the 2005 edition).

--- Revised the precision according to the test results (Chapter 11, 2005, Chapter 11).

--- Added normative Appendix A, Normative Appendix B, and Normative Appendix C (see Appendix A, Appendix B, Appendix C).

This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.

The Technical Committee of Materials Technical Committee (SAC/TC203/SC2) jointly proposed and managed.

1 Scope

This standard specifies the application of scanning surface inspection system to test the local light scatterers on the surface of mirror wafers such as polished sheets and epitaxial wafers.

A method of distinguishing, identifying, and testing a local light scatterer from an extended light scatterer, scattered light, and reflected light. For 130nm~11nm For line width process wafers, this standard provides settings for scanning surface inspection systems.

This standard is applicable to the detection, counting and surface local light scatterers of silicon polishing sheets and epitaxial wafers using a scanning surface inspection system.

Classification, also applicable to the scratching of silicon polished sheets and epitaxial wafers, the detection, counting and classification of crystal native pits, on silicon polished sheets and outside The orange peel, corrugation, fog on the surface of the sheet and the pyramids and mastoids of the epitaxial sheet were observed and identified. This standard is also applicable to enamel polishing Testing of local light scatterers on mirror wafer surfaces such as sheets, compound polishing sheets, etc.

Note: In this standard, polished sheets and epitaxial wafers of epitaxial wafers and epitaxial wafers of silicon, germanium and gallium arsenide materials, and epitaxial wafers are collectively referred to as wafers.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 6624 silicon polishing sheet surface quality visual inspection method

GB/T 12964 silicon single crystal polishing sheet

GB/T 12965 silicon single crystal cutting sheet and abrasive sheet

GB/T 14139 silicon epitaxial wafer

GB/T 14264 semiconductor material terminology

GB/T 25915.1 Clean rooms and related controlled environments - Part 1. Air cleanliness

GB/T 29506 300mm silicon single crystal polishing sheet

SEMIM35 Guide to the development of specifications for automatic surface inspection of silicon wafers (Guidefordevelopingspecificationsfor Siliconwafersurfacefeaturesdetectedbyautomatedinspection)

SEMIM52 Guide to Scanning Surface Inspection System for 130nm to 11nm Linewidth Process Wafers (Guideforscanning Surfaceinspectionsystemsforsiliconwaferforthe130nmto11nmtechnologygenerations)

SEMIM53 is calibrated by depositing a certified single disperse polystyrene latex sphere on a non-patterned semiconductor wafer surface Scanning surface inspection system procedures (Practiceforcalibratingscanningsurfaceinspectionsystemsusingcertified Depositionsofmonodisperereferencespheresonunpatternedsemiconductorwafersurfaces)

SEMIM58 particle deposition system and process evaluation test method (TestmethodforevaluatingDMAbasedpar- Ticledepositionsyetemsandprocesses)

3 Terms and definitions

The following terms and definitions defined by GB/T 14264 and SEMIM 35 apply to this document. For ease of use, repeat the following Some terms and definitions in GB/T 14264 are listed.