GB/T 29506-2013300mm polished monocrystalline silicon wafers (English PDF)

1 Scope

This standard specifies the diameter of 300mm, p-type < 100> crystal orientation, resistivity of 0.5ohm · cm ~ 20ohm · cm polished silicon single crystal specifications

Terms and definitions, technical requirements, test methods, testing rules and signs, packaging, transportation, storage and so on.

This standard applies to a diameter of 300mm monocrystalline Czochralski silicon single crystal polished by grinding sheet double-sided polishing preparation, the products are used to meet

IC IC 90nm technology needs with the substrate sheet width.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein

Member. For undated references, the latest edition (including any amendments) applies to this document.

GB/T 1550 extrinsic conductivity type semiconductor material testing methods

GB/T 1554 crystallographic perfection of silicon by preferential etch test methods

GB/T 1555 to the measurement method of a semiconductor single crystal

GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method

GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method

GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan

GB/T 4058 Test Method polished silicon oxide induced defects

GB/T 6616 resistivity of semiconductor silicon and silicon thin film sheet resistance test method of non-contact eddy current method

GB/T 6624 polished silicon surface quality by visual inspection

Methods of measurement GB/T 11073 radial resistivity variation on silicon

GB/T 13388 wafer reference surface X-ray crystallographic orientation measurements

GB/T 14140 wafer diameter measuring method

GB/T 14264 semiconductor material terms

GB/T 19921 Test Method polished silicon surface of the particles

GB/T 19922 wafer local flatness noncontact Standard Test Method

GB/T 24578 metal contamination of the wafer surface total reflection X-ray fluorescence spectrometry test methods

GB/T 26067 Test Method wafer notch size

GB/T 29504 300mm silicon single crystal

GB/T 29507 wafer flatness, thickness and total thickness variation of the non-contact testing automatic scanning

GB/T 29508 300mm monocrystalline silicon cutting discs and grinding sheet

YS/T 26 wafer edge profile test methods

YS/T 679 unsteady surface photovoltage test method intrinsic semiconductor minority carrier diffusion length

Non-contact automatic scan test method SEMIMF1390 of wafer warpage

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.