GB/T 41325-2022Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents" drafted.

1 Scope

This document specifies the technical requirements and tests for low-density crystal primary pit silicon single crystal polished wafers (hereinafter referred to as Low-COP polished wafers).

Methods, inspection rules, packaging, marking, transportation, storage, accompanying documents and the contents of the order form.

This document applies to.200mm and 300mm diameter, crystal orientation < 100 >, resistors for integrated circuits sensitive to crystal native pits Low-COP polished sheets with a rate of 0.1ohm·cm~100ohm·cm.

2 Normative references

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document.

GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials

GB/T 2828.1 Counting Sampling Inspection Procedure Part 1: Lot-by-Lot Inspection Sampling Plan Retrieved by Acceptance Quality Limit (AQL)

GB/T 4058 Test method for oxidation-induced defects of silicon polished wafers

GB/T 6616 Semiconductor silicon wafer resistivity and silicon thin film sheet resistance test method non-contact eddy current method

GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers

GB/T 12962 Silicon single crystal

GB/T 12965 Silicon single crystal cutting and grinding wafers

GB/T 14264 Terms of Semiconductor Materials

GB/T 19921 Test method for surface particles of silicon polished wafers

GB/T 29504 300mm silicon single crystal

GB/T 29505 Surface roughness measurement method of flat surface of silicon wafer

GB/T 29507 Silicon wafer flatness, thickness and total thickness variation test automatic non-contact scanning method

GB/T 29508 300mm silicon single crystal cutting wafer and grinding wafer

GB/T 32280 Automatic non-contact scanning method for testing the warpage and curvature of silicon wafers

GB/T 39145 Determination of Metal Element Content on the Surface of Silicon Wafer Inductively Coupled Plasma Mass Spectrometry

YS/T 28 wafer packaging

YS/T 679 Surface Photovoltaic Method for Measuring Minority Carrier Diffusion Length in Extrinsic Semiconductors Evaluation of SEMIM67 wafer near-edge geometry ESFQR, ESFQD, ESBIR methods (Test method for FQD, and ESBIRmetrics)