GB/T 4058-2009Test method for detection of oxidation induced defects in polished silicon wafers (English PDF)
硅抛光片氧化诱生缺陷的检验方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
October 30, 2009
Implementation date
June 1, 2010
Scope
GB/T 4058-2009 is the English-translated version of 硅抛光片氧化诱生缺陷的检验方法.
GB/T 4058-2009 is the Chinese standard "Test method for detection of oxidation induced defects in polished silicon wafers". Its scope clause reads: This standard specifies the polished silicon oxide induced defects in test methods.
This standard is applicable to the detection zone in the surface of polished silicon wafers Analog oxidation process induced or enhanced crystal defects. Inspection oxidation induced defects in silicon single crystal can also refer to this method.
Its clauses include terms and definitions; principle of the method; reagents and materials.
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Document preview — GB/T 4058-2009
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 80
- Replacing
- GB/T 4058-1995
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 principle of the method
- 5 Reagents and materials
1 Scope
This standard specifies the polished silicon oxide induced defects in test methods.
This standard is applicable to the detection zone in the surface of polished silicon wafers Analog oxidation process induced or enhanced crystal defects.
Inspection oxidation induced defects in silicon single crystal can also refer to this method.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 1554 crystallographic perfection of silicon by preferential etch test methods
GB/T 14264 semiconductor material terms
YS/T 209 native silicon material defect map
3 Terms and Definitions
Terms and definitions GB/T 14264 in the provisions applicable to this standard.
4 principle of the method
Oxidizing conditions Analog technology, the use of oxidation dressed or expand wafer defects, or both, followed by preferential etching solution
Display defects, and observation by microscopy.
5 Reagents and materials
5.1
trioxide, pure class distinctions.
5.2
hydrofluoric acid, pure class distinctions.
5.3
nitric acid, pure class distinctions.
5.4
ammonia, pure class distinctions.
5.5
hydrochloric acid, pure class distinctions.
5.6
hydrogen peroxide, pure class distinctions.
5.7
pure water resistivity greater than 10Mohm · cm (25 °C).
5.8
acetic acid, pure class distinctions.
5.9
copper nitrate, pure class distinctions.
5.10 cleaning solution # 1
water. aqueous ammonia. hydrogen peroxide = 1 pixel in horizontal (volume ratio).
5.11 cleaning solution # 2
water. hydrochloric acid. hydrogen peroxide = 1 pixel in horizontal (volume ratio).
Chemical polishing liquid ratio 5.12. HF.HNO3 = 1. (3 ~ 5) (ratio by volume).
5.13
chromic acid Solution A. chromium trioxide 500g weighed into a beaker of water after complete dissolution, transferred to 1000mL volumetric flask, dilute with water
Diluted to volume, and mix (see GB/T 1554).
5.14 chromic acid solution B
Weigh 75g of chromium trioxide in the beaker, after dissolved in water and transferred to 1000mL volumetric flask, dilute to the mark with water
Degree, and mix.
5.15 Sirtl etching solution
chromic acid solution A (5.13). hydrofluoric acid = 1/1 (volume ratio), the preparation before use.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 16 pages — is available in the English PDF.
Referenced standards
Cited by
- GB/T 26069-2022Annealed monocrystalline silicon wafers
- GB/T 41325-2022Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
- GB/T 12964-2018Monocrystalline silicon polished wafers
- GB/T 12962-2015Monocrystalline silicon
- YS/T 985-2014Polished reclaimed silicon wafers
Similar standards
Editions of GB/T 4058
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 4058-2009 | Test method for detection of oxidation induced defects in polished silicon wafers | current edition | Current |
| GB/T 4058-1995 | Test method for detection of oxidation induced defects in polished silicon wafers | previous edition | Superseded |
This page sells the current edition, GB/T 4058-2009. Earlier editions are listed for reference only.
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