GB/T 12965-2018Monocrystalline silicon as cut wafers and lapped wafers (English PDF)

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 12965-2005 "silicon single crystal cutting sheet and abrasive sheet", compared with GB/T 12965-2005, in addition to editorial The main technical changes outside the revision are as follows:

--- The scope will be "this standard applies to the circle prepared by straight-drawing, suspension zone melting and neutron enthalpy-doped silicon single crystal by cutting and double-side grinding. "Shaped silicon wafer" was changed to "This standard applies to straight preparation by the Czochralski method, the suspension zone melting method (including neutron enthalpy doping and gas phase doping). Circular silicon single crystal cutting sheets and abrasive sheets having a diameter of not more than.200 mm" (see Chapter 1, Chapter 1 of the.2005 edition);

--- GB/T 1552, GB/T 1554, GB/T 12964 have been deleted from the normative reference documents, and GB/T 1551 has been added. GB/T 6619, GB/T 26067, GB/T 29507, GB/T 32279, GB/T 32280, YS/T 28 (see Chapter 2,.2005) Chapter 2 of the annual edition);

--- Deleted the specific terminology and changed it to "The terms and definitions defined in GB/T 14264 apply to this document" (see Chapter 3,.2005). Chapter 3 of the annual edition);

--- Removed the classification according to the silicon single crystal growth method, and added "the silicon wafer is divided into commonly used {100}, {111} according to the surface orientation. {110} three" (see 4.2.2, version

--- Combine "physical performance parameters" and "crystal integrity" into "physical and chemical properties" (see 5.1,.2005, 5.1, 5.3);

--- Added "electrical performance" (see 5.2);

--- Revised the allowable deviation of the diameter of 50.8mm, 125mm, 150mm silicon wafers, revised 100mm, 125mm, 150mm The thickness of the diameter cutting piece, revised the warpage requirements of 150mm and.200mm diameter silicon wafers (see Table 1,.2005 edition) Table 1);

--- Increased the requirements for the curvature of the silicon (see Table 5.3);

--- Increased the main reference surface diameter and the size of the slit (see Figure 1);

--- Revised the surface orientation of the silicon wafer as "the surface orientation of the silicon wafer is {100}, {110}, {111}, commonly used {100}, {111}" (see 5.4.1,

5.4.1 of the.2005 edition;

--- Added "other crystal orientation requirements not included, determined by the supply and demand sides" (5.4.3);

--- Deleted "Whether the silicon wafer is used to make the reference surface, determined by the user" and "The orientation and position of the silicon master and sub-reference planes should conform to Table 2 and The provisions of Table 1" (see 5.4.3,

1 Scope

GB/T 12965-2018 is the Chinese national standard on monocrystalline silicon as cut wafers and lapped wafers, in the field of electrical engineering. The /T suffix marks it as a recommended standard: it is not compulsory by itself, but it becomes binding as soon as a contract, a tender or a customer specification calls it up - which in practice is how most foreign buyers meet it. It was issued on 17 September 2018 by the State Administration for Market Regulation; Standardization Administration of China, and has been in force since 1 June 2019. Classification: ICS 29.045, CCS H82. This page is published from the official record of the standard held by the Chinese standards administration: the identification, the dates, the classification and the issuing body are taken from there. The clause text, the tables and the numeric limits are in the document itself, which is delivered complete in English translation.

This standard specifies the grades and classifications, requirements, test methods, inspection rules, signs, and specifications of silicon single crystal cutting sheets and abrasive sheets (referred to as silicon wafers). Packaging, transportation, storage, quality certificate and order form (or contract). This standard is applicable to diameters of not more than.200mm prepared by Czochralski method, suspension zone melting method (including neutron enthalpy doping and gas phase doping). Round silicon single crystal cutting sheets and abrasive sheets. Products are mainly used to make transistors, rectifier devices, etc., or further processed into polished sheets.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials

GB/T 1551 silicon single crystal resistivity determination method

GB/T 1555 semiconductor single crystal orientation determination method

GB/T 2828.1-2012.Sampling procedures for sampling by sampling - Part 1 . Batch-by-batch inspections by Retrieving Quality of Acceptance (AQL) plan

GB/T 6616 Semiconductor silicon wafer resistivity and silicon film sheet resistance test method Non-contact eddy current method

GB/T 6618 silicon wafer thickness and total thickness variation test method

GB/T 6619 silicon wafer bending test method

GB/T 6620 silicon wafer warpage non-contact test method

GB/T 6624 silicon polishing sheet surface quality visual inspection method

GB/T 11073 Silicon wafer radial resistivity change measurement method

GB/T 12962 silicon single crystal

GB/T 13387 Silicon and other electronic materials wafer reference surface length measurement method

GB/T 13388 silicon wafer reference surface crystallographic orientation X-ray test method

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.