GB/T 14844-2018Designations of semiconductor materials (English PDF)

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 14844-1993 "Semiconductor material grade indication method", compared with GB/T 14844-1993 main technology The changes are as follows:

--- Revised the description of the applicability of this standard in the scope (see Chapter 1, Chapter 1 of the.1993 edition);

--- Divide the production method and use of the original

3.1.1 into two, and adjust the order of the brand representation method. The name is the first item. The production method is the second item (see 3.1.1,.1993 edition 3.1);

--- Removed the "casting method" in the polycrystalline production method, adding "T for trichlorosilane method", "S for silane method", "F fluidized bed" "" and "other forms of production methods are referred to the above methods" (see 3.1.3,

3.1.1 of the.1993 edition);

--- Modified "N for block" to "C for block" and added "G for granular" and "Other polymorphic shape representations" Refer to the above method" (see 3.1.4,

3.1.3 of the.1993 edition);

--- Added "E for electronic grade use" and "S for solar grade use" (see 3.1.6);

--- Adjusted the ordering of single-crystal grade representations (see 3.2.1,

3.2 of the.1993 edition);

--- Added examples such as silicon single crystal Si, gallium arsenide single crystal GaAs, silicon carbide single crystal SiC, germanium single crystal Ge, indium telluride single crystal InSb, phosphorus Gallium single crystal GaP and indium phosphide single crystal InP, etc." (see 3.2.2);

--- Added "C for ingot casting method" (see 3.2.3);

--- Added conductivity type example "For example, N-type conductivity type doping elements are phosphorus P, Sb, arsenic As, P-type conductivity type doping elements It is known as boron B, and the region is melted by gas phase doping with FGD (see 3.2.4);

1 Scope

GB/T 14844-2018 is the Chinese national standard on designations of semiconductor materials, in the field of electrical engineering. The /T suffix marks it as a recommended standard: it is not compulsory by itself, but it becomes binding as soon as a contract, a tender or a customer specification calls it up - which in practice is how most foreign buyers meet it. It was issued on 28 December 2018 by the State Administration for Market Regulation; Standardization Administration of China, and has been in force since 1 November 2019. Classification: ICS 29.045, CCS H80. This page is published from the official record of the standard held by the Chinese standards administration: the identification, the dates, the classification and the issuing body are taken from there. The clause text, the tables and the numeric limits are in the document itself, which is delivered complete in English translation.

This standard specifies the brand representation of semiconductor polycrystalline, single crystal, wafer, epitaxial wafers and other products. This standard applies to the grades of semiconductor polycrystalline, single crystal, wafer, epitaxial wafers, etc., other semiconductor material grades can refer to carried out.

2 Brand classification

According to the crystal structure and product shape, the semiconductor material grades are divided into four types. polycrystalline, single crystal, wafer and epitaxial wafer. See Appendix A for the meaning.