YS/T 1167-2016Monocrystalline silicon etched wafers (English PDF)
硅单晶腐蚀片
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
July 11, 2016
Implementation date
January 1, 2017
Scope
YS/T 1167-2016 is the English-translated version of 硅单晶腐蚀片.
YS/T 1167-2016 — This standard specifies the grades and classifications, requirements, test methods, inspection rules and marking, packaging, transportation, storage, and Quality certificate and order form (or contract) content.
This standard is applicable to chemical polishing of silicon single crystal abrasive sheets prepared by Czochralski method, suspension zone melting method (including zone melting neutron enthalpy and gas phase doping).
An acid etching sheet and an alkali etching sheet (hereinafter referred to as an etching sheet) prepared by removing the surface damage layer by the etching liquid.
The product is mainly used to make transistors and Semiconductor components such as flow tubes, extra-large power thyristors, and optoelectronic devices are further processed into silicon polishing sheets.
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Document preview — YS/T 1167-2016
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 82
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the grades and classifications, requirements, test methods, inspection rules, and signs, packaging, transportation, storage, quality certificates and order forms (or contracts) of silicon single crystal corrosion tablets.
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H82.
Estimated length of the Chinese original: 10,121 words.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 1550Test methods for conductivity type of extrinsic semiconducting materials
- GB/T 1555Test methods for determining the orientation of a semiconductive single crystal
- GB/T 2828.1Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
- GB/T 6616Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
- GB/T 6618Test method for thickness and total thickness variation of silicon slices
- GB/T 6620Test method for measuring warp on silicon slices by noncontact scanning
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Related Standards
GB/T 11073-2025 — Test method for measuring radial resistivity variation on silicon wafers
GB/T 12962-2015 — Monocrystalline silicon
GB/T 12965-2018 — Monocrystalline silicon as cut wafers and lapped wafers
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YS/T 1167-2016
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