GB/T 6620-2009Test method for measuring warp on silicon slices by noncontact scanning (English PDF)
硅片翘曲度非接触式测试方法
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Issued by
Standardization Administration of China
Level / Type
National · Recommended
Issue date
October 30, 2009
Implementation date
June 1, 2010
Scope
GB/T 6620-2009 is the English-translated version of 硅片翘曲度非接触式测试方法.
GB/T 6620-2009 — This standard specifies the silicon single crystal cutting, grinding film, polished (hereinafter referred to as wafers) warpage non-contact testing methods.
This standard applies to measuring the diameter larger than 50mm, a thickness greater than the circular silicon 180µm. This standard also applies to measure other half Conductor wafer warpage.
The purpose of this test method is used for incoming inspection or process control. This test method is also applicable to the monitor plus member Thermo-chemical effect during processing of wafer warpage.
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Document preview — GB/T 6620-2009
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 82
- Replacing
- GB/T 6620-1995
Issued by: Standardization Administration of China
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This standard specifies the monocrystalline silicon cutting discs, grinding pieces, polished (hereinafter referred to as silicon) warpage non-contact testing methods. This standard for measuring a diameter greater than 50 mm, a thickness greater than 180 µm circular wafers. This standard is also applicable to other semiconductor measuring warpage picture card. The purpose of this test method is used for incoming inspection or process control. This test method is also suitable for hot chemistry monitoring device wafers during processing of warpage.
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H82.
Estimated length of the Chinese original: 10,197 words.
Adopted international standard: SEMI MF657-0705, MOD.
Supersedes the earlier edition GB/T 6620-1995.
Standards quoted by this document
GB/T 2828.1; GB/T 6618; GB/T 14264
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 2828.1Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
- GB/T 2828.1-2003Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
- GB/T 6618Test method for thickness and total thickness variation of silicon slices
- GB/T 14264Terminology of semiconductor materials
ISO 2859
Cited by
- GB/T 35305-2026Gallium arsenide monocrystals and polished wafers for solar cells
- GB/T 30856-2025GaAs substrates for LED epitaxial chips
- GB/T 45968-2025Optical near stoichiometric lithium niobate crystal used in quantum information
- GB/T 20229-2022Gallium phosphide single crystal
- GB/T 32280-2022Test method for warp and bow of silicon wafers—Automated non-contact scanning method
- GB/T 12964-2018Monocrystalline silicon polished wafers
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Related Standards
GB/T 14264-2024 — Terminology of semiconductor materials
GB/T 2828.1-2012 — Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
GB/T 2828.10-2010 — Sampling procedures for inspection by attributes -- Part 10: Introduction to the GB/T 2828 series of standards for sampling for inspection by attributes
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GB/T 6620-2009
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