GB/T 20229-2022Gallium phosphide single crystal (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents" drafted.

This document replaces GB/T 20229-2006 "Gallium Phosphide Single Crystal", compared with GB/T 20229-2006, except for structural adjustment and editorial In addition to the changes, the main technical changes are as follows.

a) Changed the scope of application (see Chapter 1, Chapter 1 of the.2006 edition);

b) the chapter "Terms and Definitions" was added (see Chapter 3);

c) Changed the representation of grades (see Chapter 4, 3.1 of the.2006 edition);

d) Change the carrier concentration and resistivity requirements of doped n-type gallium phosphide single crystal ingot (see 5.1.1, 3.2.2 of the.2006 edition);

e) Added the electrical performance requirements for p-type and semi-insulating gallium phosphide single crystal ingots (see 5.1.1);

f) Deleted the requirement for the diameter of gallium phosphide single crystal ingot (see 3.2.4 of the.2006 edition);

g) The requirements for dislocation density of gallium phosphide single crystal ingots have been increased (see 5.1.3);

h) Deleted the requirement for gallium phosphide single crystal ingots without twin lines (see 3.2.5 of the.2006 edition);

i) Changed the requirements for dislocation density of gallium phosphide single crystal grinding sheets (see 5.2.1, 3.3.2 of the.2006 edition);

j) Added the requirements for the surface orientation of gallium phosphide single crystal grinding sheets (see 5.2.2);

k) Changed the thickness and allowable deviation requirements of the 50.8mm diameter gallium phosphide single crystal grinding sheet (see 5.2.3, 3.3.4 of the.2006 edition);

l) Added the requirements for warpage, total thickness change, and total indication reading in geometric parameters of gallium phosphide single crystal grinding sheet (see 5.2.3);

m) The geometrical parameter requirements for gallium phosphide single crystal grinding sheets with a diameter of 63.5mm and 76.2mm have been added (see 5.2.3);

n) Changed the requirements for the surface quality of gallium phosphide single crystal grinding sheets (see 5.2.4, 3.3.3 of the.2006 edition);

o) Changed the test method (see Chapter 6, Chapter 4 of the.2006 edition);

p) Modified the determination of batch, inspection items, sampling and inspection results (see Chapter 7, Chapter 5 of the.2006 edition);

q) Changed the requirements for signs (see 8.1, 6.1 of the.2006 edition);

r) Changed the packaging requirements (see 8.2, 6.2 and 6.3 of the.2006 edition);

s) Changed the requirements for accompanying documents (see 8.5, 6.5 of the.2006 edition);

t) Added the content of the order form (see Chapter 9);

u) Added the normative appendix "Test method for dislocation density of gallium phosphide single crystal" (see Appendix A).

1 Scope

This document specifies the grades, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage and accompanying documents of gallium phosphide single crystals parts and the contents of the order form.

This document applies to the production of gallium phosphide single crystal ingots and gallium phosphide single crystal grinding sheets for optoelectronic, microelectronic and acousto-optic devices.

2 Normative references

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document.

GB/T 1555 Method for Determination of Crystal Orientation of Semiconductor Single Crystal

GB/T 2828.1-2012 Counting Sampling Inspection Procedures Part 1: Lot-by-Lot Inspection Sampling Retrieved by Acceptance Quality Limit (AQL) plan

GB/T 4326 Extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method

GB/T 6618 Silicon Wafer Thickness and Total Thickness Variation Test Method

GB/T 6620 Non-contact test method for warpage of silicon wafers

GB/T 6621 Test Method for Surface Flatness of Silicon Wafers

GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers

GB/T 14264 Terms of Semiconductor Materials

GB/T 14844 Representation method of semiconductor material grades

SJ/T 11488 Test method for semi-insulating gallium arsenide resistivity, Hall coefficient and mobility

3 Terms and Definitions

Terms and definitions defined in GB/T 14264 apply to this document.

4 Grades

The designation method of gallium phosphide single crystal ingots and gallium phosphide single crystal grinding sheets shall comply with the provisions of GB/T 14844.

5 Technical requirements