GB/T 6618-2009Test method for thickness and total thickness variation of silicon slices (English PDF)
硅片厚度和总厚度变化测试方法
This is a limited preview
Buy now to download the full PDF (15 pages)
Need quotation for your management?
Get a formal quotation for GB/T 6618-2009 in 30 minutes.
Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
October 30, 2009
Implementation date
June 1, 2010
Scope
GB/T 6618-2009 is the English-translated version of 硅片厚度和总厚度变化测试方法.
GB/T 6618-2009 is the Chinese standard "Test method for thickness and total thickness variation of silicon slices".
Its scope clause reads: This standard specifies the silicon single crystal cutting, abrasive sheet, polished and epitaxial wafers (wafer short) changes in thickness and the total thickness of the discrete and sweep Described measuring method.
This standard applies to GB/T 12964, GB/T 12965, wafer thickness GB/T 14139 stipulated size and total thickness variation Of measurement. In the test instrument allows, this standard can also be used to measure the thickness and other specifications of the total thickness of the wafer changes. Its clauses include methods summary.
Found what you need?
Document preview — GB/T 6618-2009
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 80
- Replacing
- GB/T 6618-1995
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- 1 Scope
- 2 Normative references
- 3 Methods Summary
- 3.1 discrete point measurement
1 Scope
This standard specifies the silicon single crystal cutting, abrasive sheet, polished and epitaxial wafers (wafer short) changes in thickness and the total thickness of the discrete and sweep
Described measuring method.
This standard applies to GB/T 12964, GB/T 12965, wafer thickness GB/T 14139 stipulated size and total thickness variation
Of measurement. In the test instrument allows, this standard can also be used to measure the thickness and other specifications of the total thickness of the wafer changes.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan (GB/T 2828.1-2003, ISO 2859-1.1999, IDT)
GB/T 12964 monocrystalline silicon polished wafer
GB/T 12965 monocrystalline silicon cutting discs and grinding sheet
GB/T 14139 silicon wafer
3 Methods Summary
3.1 discrete point measurement
Measuring the thickness of silicon wafers from the center and edge of the wafer 6mm 4 positions symmetrical points on the circumference. Which is located two wafers
The angle between the main reference plane perpendicular bisector counterclockwise to a diameter of 30 °, two other points are located on the diameter perpendicular to the diameter of the other (See FIG. 1). Wafer center point thickness as the nominal thickness of the silicon wafer. The difference between the five thickness measurements of the maximum and minimum thicknesses of said
The change in total thickness for the silicon wafer.
Figure 1 measurement point position when the discrete point measurement […]
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Cited by
- GB/T 35305-2026Gallium arsenide monocrystals and polished wafers for solar cells
- GB/T 47902-2026Polished single-crystal diamond wafers
- GB/T 11073-2025Test method for measuring radial resistivity variation on silicon wafers
- GB/T 30856-2025GaAs substrates for LED epitaxial chips
- GB/T 45968-2025Optical near stoichiometric lithium niobate crystal used in quantum information
- GB/T 46611-2025Lithium niobate single-crystal thin film for electro-optic modulators
Similar standards
Editions of GB/T 6618
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 6618-2009 | Test method for thickness and total thickness variation of silicon slices | current edition | Current |
| GB/T 6618-1995 | Test method for thickness and total thickness variation of silicon slices | previous edition | Superseded |
This page sells the current edition, GB/T 6618-2009. Earlier editions are listed for reference only.
How to Download GB/T 6618-2009
- 1
Add to cart
Click "Download PDF" on this page and choose "Buy this standard". You can add more standards before checkout.
- 2
Checkout
Enter your email and billing details. Payment is processed securely by Stripe (cards or bank transfer). Prefer bank details? Request a quotation (min. order $300).
- 3
Instant delivery (0–9 sec)
Delivery is automatic: within seconds of payment you'll receive an email with a secure download link. The link stays valid for 72 hours.
- 4
Invoice included
A tax invoice is attached to the confirmation email. Need a custom invoice? Contact us.
Related Standards
GB/T 10003-2026 — Biaxially oriented polypropylene (BOPP) film
GB/T 10004-2026 — Plastic/Plastic laminated films and pouches for packaging
GB/T 10007-2026 — Rigid cellular plastics - Determination of shear properties
Secure payment via Stripe
Payments accepted
GB/T 6618-2009
$165.00