GB/T 42907-2023Test method for excess-charge-carrier recombination lifetime in silicon ingots, silicon bricks and silicon wafers—Noncontact eddy-current sensor (English PDF)
硅锭、硅块和硅片中非平衡载流子复合寿命的测试 非接触涡流感应法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
August 6, 2023
Implementation date
March 1, 2024
Scope
GB/T 42907-2023 is the English-translated version of 硅锭、硅块和硅片中非平衡载流子复合寿命的测试 非接触涡流感应法.
This document describes the non-contact eddy-current sensor method for measuring the excess charge carrier recombination lifetime of the monocrystalline silicon ingots, bricks and wafers used for solar cells.
The document applies to ingots, bricks and wafers whose recombination lifetime lies between 0.1 µs and 10000 µs and whose resistivity lies between 0.1 ohm·cm and 10000 ohm·cm.
Within that range the transient photoconductance decay method suits lifetimes below 100 µs and the quasi-steady-state photoconductance method suits lifetimes above 200 µs; between 100 µs and 200 µs either method may be used.
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Document preview — GB/T 42907-2023
National Standard of the People's Republic of China
- ICS
- 77.040
- Classification
- H 21
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative reference documents
- 3 Terms and definitions
- 4 Method Principle
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.
1 Scope
This document describes the non-contact eddy current induction method for testing non-equilibrium carrier complexes in monocrystalline silicon ingots, silicon blocks and silicon wafers for solar cells. life-span method.
This document is applicable to non-equilibrium carrier recombination lifetimes between 0.1µs and 10000µs and resistivity between 0.1ohm·cm and 10000ohm·cm.
Testing of silicon ingots, silicon blocks and silicon wafers. Among them, the transient photoconductivity attenuation method is suitable for silicon when the non-equilibrium carrier recombination lifetime is less than 100 µs.
For testing of ingots, silicon blocks and silicon wafers, the quasi-steady state photoconductivity method is suitable for silicon ingots, silicon blocks and silicon wafers when the non-equilibrium carrier recombination lifetime is greater than 200 µs.
According to the test, when the non-equilibrium carrier recombination life is between 100µs and 200µs, both test methods are applicable.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.
GB/T 1551 Determination of resistivity of silicon single crystal.
GB/T 6618 Silicon wafer thickness and total thickness variation test method
GB/T 13389 Conversion procedures for resistivity and dopant concentration of boron-doped phosphorus-doped arsenic-doped silicon single crystal
GB/T 14264 Semiconductor material terminology
3 Terms and definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1 Trap effect
When there are non-equilibrium carriers, the impurity energy level accumulates a certain kind of non-equilibrium carrier effect.
Note: For example, the phenomenon of deep energy levels formed by heavy metal impurities in the forbidden band of semiconductors, after capturing non-equilibrium carriers, and releasing them after a period of time is called a trap. effect.
3.2 Excess charge carrier recombination lifetime
The average time interval from generation to recombination of non-equilibrium hole-electron pairs in a uniform semiconductor.
4 Method Principle
4.1 Transient photoconductivity attenuation method
The sample is placed at a fixed position 1mm~3mm away from the calibrated eddy current sensor, and a light source that changes over time is used to The sample to be tested is irradiated. After the illumination suddenly stops, use the instrument calibration method to convert the data obtained from the eddy current sensor into photoconductivity, and then Convert this to carrier concentration using the silicon mobility function. The functional relationship between carrier recombination lifetime and concentration can be analyzed by analyzing carrier concentration.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 1551Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
- GB/T 6618Test method for thickness and total thickness variation of silicon slices
- GB/T 13389Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
- GB/T 14264Terminology of semiconductor materials
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Related Standards
GB/T 13389-2014 — Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
GB/T 14264-2024 — Terminology of semiconductor materials
GB/T 1551-2021 — Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
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