GB/T 20230-2022Indium phosphide single crystal (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents" drafted.

This document replaces GB/T 20230-2006 "Indium Phosphide Single Crystal", compared with GB/T 20230-2006, except for structural adjustment and editorial In addition to the changes, the main technical changes are as follows.

a) Changed the scope of application (see Chapter 1, Chapter 1 of the.2006 edition);

b) the chapter "Terms and Definitions" was added (see Chapter 3);

c) Changed the designation method of indium phosphide single crystal ingots (see 4.1, 3.1 of the.2006 edition);

d) The designation method of indium phosphide single crystal polished wafers has been added (see 4.2);

e) Changed the requirements for the electrical properties of indium phosphide single crystal ingots (see 5.1.1, 3.2.2 of the.2006 edition);

f) The requirements for electrical properties of n-type undoped indium phosphide single crystal ingots are added (see 5.1.1);

g) The crystal orientation < 111> and other crystal orientations of the ingot indium phosphide ingot are deleted through negotiation between the supplier and the buyer (see 3.2.3 of the.2006 edition);

h) The requirements for dislocation density of indium phosphide single crystal ingots are added (see 5.1.3);

i) Deleted the requirement for no twinning lines of indium phosphide single crystal ingots (see 3.2.4 of the.2006 edition);

j) Deleted the requirement for the diameter of ingot single crystal indium phosphide (see 3.2.5 of the.2006 edition);

k) Changed the requirements for dislocation density of indium phosphide single crystal polished wafers (see 5.2.1, 3.3.1 of the.2006 edition);

l) The requirements for surface orientation and fiducial marks of indium phosphide single crystal polished wafers have been added (see 5.2.2);

m) The geometrical parameter requirements for indium phosphide single crystal polished wafers with a diameter of 150.0 mm are added (see 5.2.3);

n) Changed the requirements for indium phosphide single crystal polished wafer thickness, total thickness variation, warpage, and total indication reading (see 5.2.3,.2006 edition 3.3.2);

o) Changed the requirements for the surface quality of indium phosphide single crystal polished wafers (see 5.2.4, 3.3.3 of the.2006 edition);

p) Added the requirements for surface particles of indium phosphide single crystal polished wafers (see 5.2.5);

q) Deleted the requirement for the lamellar orientation of indium phosphide single crystal polished (see 3.3.5 of the.2006 edition);

r) Changed the test method (see Chapter 6, Chapter 4 of the.2006 edition);

s) Modified the determination of batch, inspection items, sampling and inspection results (see Chapter 7, Chapter 5 of the.2006 edition);

t) Changed the requirements for marking (see 8.1, 6.1 of the.2006 edition);

u) Changed the packaging requirements (see 8.2, 6.2 and 6.3 of the.2006 edition);

v) Changed the requirements for accompanying documents (see 8.5, 6.5 of the.2006 edition);

w) Added the content of the order form (see Chapter 9);

x) Added the normative appendix "Test method for dislocation density of indium phosphide single crystals" (see Appendix A).

1 Scope

This document specifies the grades, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage and accompanying documents of indium phosphide single crystals parts and the contents of the order form.

This document applies to the production of indium phosphide single crystal ingots and indium phosphide single crystal polished wafers for optoelectronic and microelectronic devices.

2 Normative references

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document.

GB/T 1555 Method for Determination of Crystal Orientation of Semiconductor Single Crystal

GB/T 2828.1-2012 Counting Sampling Inspection Procedures Part 1: Lot-by-Lot Inspection Sampling Retrieved by Acceptance Quality Limit (AQL) plan

GB/T 4326 Extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method

GB/T 6618 Silicon Wafer Thickness and Total Thickness Variation Test Method

GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers

GB/T 13388 Silicon wafer reference plane crystallographic orientation X-ray test method

GB/T 14264 Terms of Semiconductor Materials

GB/T 19921 Test method for surface particles of silicon polished wafers

GB/T 26067 silicon wafer notch size test method

GB/T 32278 Silicon carbide single wafer flatness test method

SJ/T 11488 Test method for semi-insulating gallium arsenide resistivity, Hall coefficient and mobility

3 Terms and Definitions

Terms and definitions defined in GB/T 14264 apply to this document.

4 Grades