GB/T 32278-2025Test method for thickness and flatness of monocrystalline silicon carbide wafers (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

This document replaces GB/T 32278-2015 "Test method for flatness of silicon carbide single wafer" and GB/T 30867-2014 "Test method for flatness of silicon carbide single wafer".

This document is based on GB/T 32278-2015 and integrates GB/T 30867-2014.

Compared with GB/T 32278-2015, in addition to structural adjustments and editorial changes, the main technical changes are as follows.

a) The scope of application of the document has been changed (see Chapter 1, Chapter 1 of GB/T 32278-2015);

b) Added references to the terms and definitions in GB/T 14264, and added the term and definition of "silicon carbide single crystal wafer" (see Chapter 3);

c) The term and definition of “local thickness variation” have been deleted (see 3.1 of GB/T 32278-2015);

d) Added contact test method and incorporated relevant contents of GB/T 30867-2014 after modification (see Chapter 4);

e) The test optical path diagram for the non-contact test method has been changed (see 5.1, Chapter 4 of GB/T 32278-2015);

f) The interference factors of the non-contact test method have been changed to include the influence of surface roughness, and GB/T 30656 and GB/T 43885 have been cited.

Requirements for surface roughness in GB/T 32278-2015 (see 5.2, Chapter 6 of GB/T 32278-2015);

g) The test conditions for the non-contact test method have been changed (see 5.3, Chapter 7 of GB/T 32278-2015);

h) The instrument and equipment for non-contact test methods have been changed (see 5.4, Chapter 5 of GB/T 32278-2015);

i) The sample requirements for non-contact test methods have been changed (see 5.5, Chapter 8 of GB/T 32278-2015);

j) The test steps of the non-contact test method have been changed (see 5.6, Chapter 9 of GB/T 32278-2015);

k) The precision requirements for non-contact test methods have been changed (see 5.7, Chapter 10 of GB/T 32278-2015).

Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.

This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203).

It is jointly proposed and coordinated by the Materials Subcommittee of the Chemical Technology Committee (SAC/TC203/SC2).

This document was drafted by: Beijing Tianke Heda Semiconductor Co., Ltd., the 46th Research Institute of China Electronics Technology Group Corporation, Shandong Tianyue Advanced Technology Co., Ltd., Anhui Changfei Advanced Semiconductor Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd., Nanjing Shengxin Semiconductor Materials Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Zhejiang Jingrui Electronic Materials Co., Ltd., Lianke Semiconductor Co., Ltd., Changfei Optical Fiber and Cable Co., Ltd., and Painjie Semiconductor (Zhejiang) Co., Ltd.

The main drafters of this document are: She Zongjing, Peng Tonghua, He Xuankun, Wang Dajun, Wang Bo, Yang Jian, He Dongjiang, Wu Dianrui, Liu Xiaoping, Liu Wei, Huang Yucheng, Hu Dongli, Wang Chuanyong, Zhao Wenqi, and Huang Xing.

This document was first published in 2015.This is the first revision. The revision incorporates GB/T 30867-2014 "Silicon Carbide Single Wafers" Thickness and total thickness change test method".

1 Scope

This document describes the thickness and flatness test methods for silicon carbide single wafers, including contact and non-contact test methods.

This document is applicable to thicknesses of 0.13mm~1mm and diameters of 50.8mm, 76.2mm, 100mm, 150mm, and.200mm.

Testing of thickness and flatness of silicon carbide single wafers.

This document is also applicable to the testing of thickness and flatness of silicon carbide epitaxial wafers.

2 Normative references

GB/T 14264

GB/T 25915.1-2021

GB/T 30656

GB/T 43885

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document.

4 Contact test method