GB/T 30656-2023Polished monocrystalline silicon carbide wafers (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting.

This document replaces GB/T 30656-2014 "Silicon Carbide Single Crystal Polished Sheet". Compared with GB/T 30656-2014, except for structural adjustment and Apart from editorial changes, the main technical changes are as follows:

a) The scope of application has been changed (see Chapter 1, Chapter 1 of the 2014 edition);

b) Changed the terms and definitions (see Chapter 3, Chapter 3 of the 2014 edition);

c) Added classification by diameter 150.0mm (see 4.2.3);

d) The technical requirements for silicon carbide single crystal polished wafers with a diameter of 150.0mm have been added (see Chapter 5);

e) The thickness and allowable deviation of semi-insulating silicon carbide single crystal polished wafers with a diameter of 100.0mm have been added (see 5.2);

f) Changed the requirements for total thickness variation (see 5.2, 4.5 of the 2014 edition);

g) The requirement for local thickness variation is added (see 5.2);

h) The warpage and curvature requirements for silicon carbide single crystal polished wafers with a diameter of 100.0 mm have been changed (see 5.2, 4.5 of the 2014 edition);

i) The requirements for resistivity have been changed (see 5.5, 4.10 of the 2014 edition);

j) Changed the requirements for microtubule density (see 5.6, 4.8 of the 2014 edition);

k) Added the requirements for the dislocation density of industrial-grade conductive silicon carbide single crystal polished wafers (see 5.7);

l) The requirements for cracks, hexagonal voids, and pits visible to the naked eye in the surface quality have been changed (see 5.10, 4.7 of the 2014 edition);

m) The requirements for chipping are added (see 5.10);

n) Added the content of usable area ratio and detection surface in surface quality (see the footnote of Table 9 in 5.10);

o) Changed the requirements for surface roughness (see 5.11, 4.5 of the 2014 edition);

p) The test method has been changed (see Chapter 6, Chapter 5 of the 2014 edition);

q) The requirements for batching and sampling have been changed (see 7.2, 7.3, 6.2, 6.3 of the 2014 edition);

r) Added inspection items (see 7.3);

s) Changed the determination of inspection results (see 7.4, 6.4 of the 2014 edition);

t) The content of the logo has been changed (see 8.1, 7.1 of the 2014 edition);

u) Changed the contents of accompanying documents (see 8.5, 7.4 of the 2014 edition);

v) Changed the content of diameter, crystal orientation angle and thickness in the method of designation (see Appendix A, Appendix A of the 2014 edition);

w) The detection method of the rocking curve is deleted (see Appendix B of the 2014 edition);

x) Added the test steps of Raman scattering method (see B.4.2).

1 Scope

This document specifies the grades and classifications, technical requirements, test methods, inspection rules, marks, Packaging, transportation, storage, accompanying documents and order form contents.

This document is applicable to the silicon carbide single crystal light sheet.

2 Normative references

The contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document.

GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystals

GB/T 2828.1-2012 Counting sampling inspection procedure Part 1: Batch-by-batch inspection sampling retrieved by acceptance quality limit (AQL) plan

GB/T 6616 Non-contact eddy current method for testing the resistivity of semiconductor silicon wafers and the sheet resistance of silicon thin films

GB/T 6624 Visual inspection method for surface quality of silicon polished wafers

GB/T 13387 Silicon and other electronic material wafer reference plane length measurement method

GB/T 13388 X-ray test method for crystallographic orientation of silicon wafer reference plane

GB/T 14264 Terminology of semiconductor materials

GB/T 25915.1-2021 Clean rooms and related controlled environments Part 1: Classification of air cleanliness by particle concentration

GB/T 26067 Test method for notch size of silicon wafer

GB/T 29505 Surface Roughness Measurement Method for Silicon Wafer Flat Surface

GB/T 30866 Test method for silicon carbide single wafer diameter

GB/T 30867 Test method for silicon carbide single wafer thickness and total thickness change

GB/T 31351 Non-destructive testing method for micropipe density on silicon carbide single crystal polished wafers

GB/T 32188 Gallium Nitride Single Crystal Substrate X-ray Dual Crystal Rocking Curve FWHM Test Method

GB/T 32278 Test method for flatness of silicon carbide single wafer

GB/T 42271 Non-contact test method for resistivity of semi-insulating silicon carbide single crystal

GB/T 41765 Test method for dislocation density of silicon carbide single crystal

3 Terms and Definitions

GB/T 14264, GB/T 32278 and the following terms and definitions apply to this document.