GB/T 41765-2022Test method for dislocation density of monocrystalline silicon carbide (English PDF)
碳化硅单晶位错密度的测试方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
October 14, 2022
Implementation date
May 1, 2023
Scope
GB/T 41765-2022 is the English-translated version of 碳化硅单晶位错密度的测试方法.
GB/T 41765-2022 is the Chinese national test method for the dislocation density of silicon carbide single crystals.
It applies to crystals whose plane is tilted from {0001} towards <1120> by 0° to 8°, and works by selective chemical etching: because the lattice is distorted around a dislocation, a potassium hydroxide melt attacks the point where the dislocation reaches the surface faster and leaves an etch pit of characteristic shape, and the pits are then counted under a microscope on the silicon face, the number per field of view being the dislocation density.
It defines three kinds of dislocation by the relation between the dislocation line and the Burgers vector, and warns that melt temperature, etching time and a melt used for more than 24 h change the result. Issued on 14 October 2022, it has applied since 1 May 2023.
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Document preview — GB/T 41765-2022
National Standard of the People's Republic of China
- ICS
- 77.040
- Classification
- H 21
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Principles
- 5 Interfering factors
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting.
1 Scope
This document specifies a test method for the dislocation density of silicon carbide single crystals.
This document is applicable to the test of the dislocation density of silicon carbide single crystal whose crystal plane deviates from the {0001} plane and deviates from the < 1120> direction by 0°~8°.
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document.
GB/T 14264 Terminology of semiconductor materials
GB/T 30656 Silicon carbide single crystal polished wafer
3 Terms and Definitions
The following terms and definitions defined in GB/T 14264 and GB/T 30656 apply to this document.
3.1 Screw dislocation
A dislocation in which the dislocation line and Burgers vector are parallel.
3.2 Edge dislocation
Dislocations perpendicular to the dislocation line and Burgers vector.
3.3 Basal plane dislocation
Both the dislocation line and the Burgers vector are located in the {0001} plane.
4 Principles
Revealing dislocations in silicon carbide single crystals using a selective chemical etch technique. Due to the distortion of the lattice around dislocations in SiC single crystals, When the surface of silicon carbide single crystal is etched with potassium hydroxide melt, the corrosion speed is faster at the outcropping of dislocations on the surface of silicon carbide single crystal, so it is easy to It is easy to form corrosion pits with specific shapes composed of some low-index surfaces. Observe the silicon carbide single crystal silicon surface under a microscope and follow certain rules The number of corrosion pits with a specific shape is counted, and the number of corrosion pits per unit field of view is the dislocation density.
5 Interfering factors
5.1 During the corrosion process, the temperature of the potassium hydroxide melt and the corrosion time will affect the corrosion effect of the sample and affect the test results.
5.2 The use time of potassium hydroxide melt during the corrosion process will affect the corrosion effect of the sample. It is recommended that the use time of the melt should not exceed 24h. Replace in time when expired.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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Related Standards
GB/T 14264-2024 — Terminology of semiconductor materials
GB/T 30656-2023 — Polished monocrystalline silicon carbide wafers
GB/T 7251.4-2026 — Low-voltage switchgear and controlgear assemblies - Part 4: Particular requirements for assemblies for construction sites (ACS)
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