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GB/T 32188-2015The method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate (English PDF)

氮化镓单晶衬底片x射线双晶摇摆曲线半高宽测试方法

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

December 10, 2015

Implementation date

November 1, 2016

Scope

GB/T 32188-2015 is the English-translated version of 氮化镓单晶衬底片x射线双晶摇摆曲线半高宽测试方法.

GB/T 32188-2015 is the Chinese standard "The method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate". Its scope clause reads: This standard specifies the use of double-crystal X-ray diffraction test gallium nitride single crystal substrate sheet rocking curve full width at half way.

This standard applies to chemical vapor deposition and other methods for preparing a gallium nitride single crystal substrate sheet growth. Its clauses include terms and definitions.

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Document preview — GB/T 32188-2015

National Standard of the People's Republic of China

ICS
77.040
Classification
H 21

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • 1 Scope
  • 2 Normative references
  • 3 Terms and Definitions
  • 3.1 Diffraction plane
  • 3.2 FWHM fulwidthathalfmaximum; FWHM

1 Scope

This standard specifies the use of double-crystal X-ray diffraction test gallium nitride single crystal substrate sheet rocking curve full width at half way.

This standard applies to chemical vapor deposition and other methods for preparing a gallium nitride single crystal substrate sheet growth.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein

Member. For undated references, the latest edition (including any amendments) applies to this document.

GB/T 14264 semiconductor material terms

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document.

3.1 Diffraction plane

X-ray of the incident beam, the beam diffraction plane configuration.

3.2 FWHM fulwidthathalfmaximum; FWHM

Rocking curve width at half maximum intensity curve.

3.3

chi axis chiaxis

Sample tilt axes intersect the surface of the sample stage and the diffraction plane is made.

3.4

chi angle chiangle

The angle between the sample surface and a crystal surface of the sample.

3.5

phi angle phiangle

Sample surface normal angle of rotation around the sample stage.

3.6

phi scan phiscan

And recorded continuously changing phi angle diffraction intensity measurement mode.

3.7

omega angle omegaangle

The angle between the incident X-rays and the sample stage surface.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

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