GB/T 30867-2014Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers (English PDF)
碳化硅单晶片厚度和总厚度变化测试方法
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Issued by
Standardization Administration of China
Level / Type
National · Recommended
Issue date
July 24, 2014
Implementation date
February 1, 2015
Scope
GB/T 30867-2014 is the English-translated version of 碳化硅单晶片厚度和总厚度变化测试方法.
GB/T 30867-2014 — This standard specifies the silicon carbide single wafer thickness and total thickness variation (TTV) of test methods, including contact and non-contact two the way.
This standard applies to a diameter of not less than 30mm, a thickness of 0.13mm ~ 1mm SiC single wafer.
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Document preview — GB/T 30867-2014
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 83
Issued by: Standardization Administration of China
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This standard specifies the silicon carbide single wafer thickness and total thickness variation (TTV) of test methods, including contact and non-contact two ways. This standard applies to a diameter of not less than 30 mm, a thickness of 0.13 mm ~ 1 mm S
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H83.
Estimated length of the Chinese original: 7,787 words.
Standards quoted by this document
GB/T 14264; GB/T 25915.1-2010
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 5 pages — is available in the English PDF.
Referenced standards
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