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GB/T 32280-2022Test method for warp and bow of silicon wafers—Automated non-contact scanning method (English PDF)

硅片翘曲度和弯曲度的测试自动非接触扫描法

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

March 9, 2022

Implementation date

October 1, 2022

Scope

GB/T 32280-2022 is the English-translated version of 硅片翘曲度和弯曲度的测试自动非接触扫描法.

GB/T 32280-2022 is the Chinese national method for measuring the warp and bow of a silicon wafer by automated non-contact scanning.

It describes the principle - the wafer is scanned with two probes, one on each side, without touching it - the apparatus, the preparation and mounting of the wafer, the scan itself, the calculation of bow and warp from the measured median surface and the test report.

It applies to clean dry silicon wafers not smaller than 50 mm in diameter and not thinner than 100 µm, as cut, lapped, etched, polished or epitaxial, and may be used for other semiconductor wafers such as gallium arsenide, silicon carbide and sapphire.

Wafer producers and fabs use it. It replaces GB/T 32280-2015, was issued on 9 March 2022 and has applied since 1 October 2022.

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Document preview — GB/T 32280-2022

National Standard of the People's Republic of China

ICS: 77.040
Classification: H 21
Replacing: GB/T 32280-2015

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Foreword
1 Scope
2 Normative references
3 Terms and Definitions

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents" drafted.

This document replaces GB/T 32280-2015 "Automatic Non-Contact Scanning Method for Wafer Warpage Test", which is consistent with GB/T 32280-2015 In addition to structural adjustments and editorial changes, the main technical changes are as follows.

a) changed the scope (see Chapter 1, Chapter 1 of the.2015 edition);

b) Added the relevant content of "curvature" (see Chapter 1, Chapter 4, Chapter 6, Chapter 9, Chapter 10);

c) added the term "reference sheet" (see 3.2);

d) The probe sensor size of 2mmx2mm is added (see 7.3);

e) Removed the reference piece for calibration (see 8.2 of the.2015 edition).

1 Scope

This document describes a method for testing the warpage and curvature of silicon wafers by automated non-contact scanning of the wafer surface using two probes.

This document applies to clean and dry silicon wafers with a diameter of not less than 50mm and a thickness of not less than 100µm, including cutting, grinding, etching, Polished, epitaxial, etched or other surface states of silicon wafers can also be used for warpage and other semiconductor wafers such as gallium arsenide, silicon carbide, sapphire, etc. Bending test.

2 Normative references

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document.

GB/T 6619 silicon wafer bending test method

GB/T 6620 Non-contact test method for warpage of silicon wafers

GB/T 14264 Terms of Semiconductor Materials

GB/T 16596 Specification for determining wafer coordinate system

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document.

3.1 Typical piece representativewafer

Gravity-corrected wafers with the same nominal diameter, nominal thickness, fiducial structure and crystallographic orientation as the measured wafers representative wafers.

3.2 Reference film

Wafers marked with warp and bow parameter values used to determine compliance with the repeatability requirements of the test equipment operating instructions.

NOTE: Parameter values are average values obtained through a large number of repeated tests using test equipment, or statistical values based on equipment repeatability studies.

3.3 Warp

The difference between the maximum and minimum distances of a free, unclamped wafer midplane relative to the reference plane within the qualified area.

3.4 Bow

The offset between the center point of the free unclamped wafer midplane and the midplane reference plane.

NOTE: The midplane datum is a plane determined by three equidistant points on the circumference of a designated diameter smaller than the nominal diameter of the wafer.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 16 pages — is available in the English PDF.

Referenced standards

Normative references

Cited by

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Editions of GB/T 32280

Edition	Title	Revision	Status
GB/T 32280-2022	Test method for warp and bow of silicon wafers—Automated non-contact scanning method	current edition	Current
GB/T 32280-2015	Test method for warp and bow of silicon wafers—Automated non-contact scanning method	previous edition	Superseded

This page sells the current edition, GB/T 32280-2022. Earlier editions are listed for reference only.

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