GB/T 44334-2024Silicon epitaxial wafers with buried layers (English PDF)
埋层硅外延片
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
August 23, 2024
Implementation date
March 1, 2025
Scope
GB/T 44334-2024 is the English-translated version of 埋层硅外延片.
GB/T 44334-2024 is the Chinese national standard covering silicon epitaxial wafers with buried layers. Issued on 23 August 2024, it has been in force since 1 March 2025.
Document preview — GB/T 44334-2024
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 82
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- PrefaceIII
- 1 Scope1
- 2 Normative references1
- 3 Terms and Definitions1
- 4 Product categories2
- 5 Technical requirements2
- 5.1 Substrate Materials2
- 5.2 Epitaxial layer2
- 5.3 Geometric parameters4
- 5.4 Surface Metal4
- 5.5 Surface quality4
- 5.6 Edge5
- 5.7 Others5
- 6 Test methods5
- 7 Inspection Rules6
- 7.1 Inspection and Acceptance6
- 7.2 Batch6
- 7.3 Inspection Items6
- 7.4 Sampling6
- 7.5 Determination of test results6
- 8 Marking, packaging, transportation, storage and accompanying documents7
- 8.1 Marking and packaging7
- 8.2 Transportation and storage8
- 8.3 Accompanying Files8
- 9 Order Contents8
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting is required.
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document was prepared by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC 203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC 203).
The work was jointly proposed and coordinated by the Materials Subcommittee of the Chemical Technical Committee (SAC/TC 203/SC 2).
This document was drafted by: Nanjing Guosheng Electronics Co., Ltd., Xi'an Longwei Semiconductor Co., Ltd., Shanghai Jingmeng Silicon Materials Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd., Zhonghuan Leading Semiconductor Materials Co., Ltd., Zhejiang Lishui Zhongxin Wafer Semiconductor Technology Co., Ltd.
Co., Ltd., Nanjing Shengxin Semiconductor Materials Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Hebei Puxing Electronic Technology Co., Ltd.
Co., Ltd., GENEVA Semiconductor Technology (Shanghai) Co., Ltd., and Saijing Asia Pacific Semiconductor Technology (Zhejiang) Co., Ltd.
The main drafters of this document are: Qiu Guangyin, Wang Yinhai, Xie Jin, Luo Hong, He Dongjiang, Ma Linbao, Gu Guangan, Li Shenzhong, Li Chunyang, Xu Xichang, Xu Xinhua, Yuan Futong, Liu Xiaoqing, Mi Jiao, Zhou Yichu, Zhang Qiang.
Buried silicon epitaxial wafer
1 Scope
This document specifies the product classification, technical requirements, test methods, inspection rules and marking, packaging, transportation, storage, etc. of buried silicon epitaxial wafers.
Storage, accompanying documents and order form contents.
This document is applicable to the production, manufacturing, testing, analysis and quality evaluation of silicon epitaxial wafers with buried layer structures. The products are mainly used for the production of integrated Circuit chips and semiconductor discrete devices.
2 Normative references
GB/T 1550
GB/T 2828.1-2012
GB/T 6617
GB/T 6624
GB/T 12964
GB/T 13389
GB/T 14139
GB/T 14141
GB/T 14142
GB/T 14146
GB/T 14264
GB/T 14847
GB/T 19921
GB/T 24578
GB/T 29507
GB/T 32280
GB/T 35310.200
GB/T 39145
3 Terms and definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1
A wafer obtained by epitaxially growing a semiconductor silicon single crystal thin film layer on a buried layer.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 1550Test methods for conductivity type of extrinsic semiconducting materials
- GB/T 2828.1-2012Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection
- GB/T 6617Test method for measuring resistivity of silicon wafer using spreading resistance probe
- GB/T 6624Standard method for measuring the surface quality of polished silicon slices by visual inspection
- GB/T 12964Monocrystalline silicon polished wafers
- GB/T 13389Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
GB/T 35310.200
Editions of GB/T 44334
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 44334-2024 | Silicon epitaxial wafers with buried layers | current edition | Current |
This page sells the current edition, GB/T 44334-2024. Earlier editions are listed for reference only.
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Related Standards
GB/T 12964-2018 — Monocrystalline silicon polished wafers
GB/T 13389-2014 — Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
GB/T 14139-2019 — Silicon epitaxial wafers
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