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GB/T 44334-2024Silicon epitaxial wafers with buried layers (English PDF)

埋层硅外延片

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

August 23, 2024

Implementation date

March 1, 2025

Scope

GB/T 44334-2024 is the English-translated version of 埋层硅外延片.

GB/T 44334-2024 is the Chinese national standard covering silicon epitaxial wafers with buried layers. Issued on 23 August 2024, it has been in force since 1 March 2025.

Document preview — GB/T 44334-2024

National Standard of the People's Republic of China

ICS
29.045
Classification
H 82

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • PrefaceIII
  • 1 Scope1
  • 2 Normative references1
  • 3 Terms and Definitions1
  • 4 Product categories2
  • 5 Technical requirements2
  • 5.1 Substrate Materials2
  • 5.2 Epitaxial layer2
  • 5.3 Geometric parameters4
  • 5.4 Surface Metal4
  • 5.5 Surface quality4
  • 5.6 Edge5
  • 5.7 Others5
  • 6 Test methods5
  • 7 Inspection Rules6
  • 7.1 Inspection and Acceptance6
  • 7.2 Batch6
  • 7.3 Inspection Items6
  • 7.4 Sampling6
  • 7.5 Determination of test results6
  • 8 Marking, packaging, transportation, storage and accompanying documents7
  • 8.1 Marking and packaging7
  • 8.2 Transportation and storage8
  • 8.3 Accompanying Files8
  • 9 Order Contents8

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting is required.

Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.

This document was prepared by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC 203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC 203).

The work was jointly proposed and coordinated by the Materials Subcommittee of the Chemical Technical Committee (SAC/TC 203/SC 2).

This document was drafted by: Nanjing Guosheng Electronics Co., Ltd., Xi'an Longwei Semiconductor Co., Ltd., Shanghai Jingmeng Silicon Materials Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd., Zhonghuan Leading Semiconductor Materials Co., Ltd., Zhejiang Lishui Zhongxin Wafer Semiconductor Technology Co., Ltd.

Co., Ltd., Nanjing Shengxin Semiconductor Materials Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Hebei Puxing Electronic Technology Co., Ltd.

Co., Ltd., GENEVA Semiconductor Technology (Shanghai) Co., Ltd., and Saijing Asia Pacific Semiconductor Technology (Zhejiang) Co., Ltd.

The main drafters of this document are: Qiu Guangyin, Wang Yinhai, Xie Jin, Luo Hong, He Dongjiang, Ma Linbao, Gu Guangan, Li Shenzhong, Li Chunyang, Xu Xichang, Xu Xinhua, Yuan Futong, Liu Xiaoqing, Mi Jiao, Zhou Yichu, Zhang Qiang.

Buried silicon epitaxial wafer

1 Scope

This document specifies the product classification, technical requirements, test methods, inspection rules and marking, packaging, transportation, storage, etc. of buried silicon epitaxial wafers.

Storage, accompanying documents and order form contents.

This document is applicable to the production, manufacturing, testing, analysis and quality evaluation of silicon epitaxial wafers with buried layer structures. The products are mainly used for the production of integrated Circuit chips and semiconductor discrete devices.

2 Normative references

GB/T 1550

GB/T 2828.1-2012

GB/T 6617

GB/T 6624

GB/T 12964

GB/T 13389

GB/T 14139

GB/T 14141

GB/T 14142

GB/T 14146

GB/T 14264

GB/T 14847

GB/T 19921

GB/T 24578

GB/T 29507

GB/T 32280

GB/T 35310.200

GB/T 39145

3 Terms and definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document.

3.1

A wafer obtained by epitaxially growing a semiconductor silicon single crystal thin film layer on a buried layer.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

Normative references

GB/T 35310.200

Editions of GB/T 44334

EditionTitleRevisionStatus
GB/T 44334-2024Silicon epitaxial wafers with buried layerscurrent editionCurrent

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