GB/T 6617-2009Test method for measuring resistivity of silicon wafer using spreading resistance probe (English PDF)

1 Scope

This standard specifies the method for measuring the spreading resistance probe resistivity silicon.

This standard applies to the measurement crystal to crystal and known conductivity type silicon substrate resistivity and the same type of measurement or reverse type silicon epitaxial layer

Resistivity measurement range. 10-3ohm · cm ~ 102ohm · cm.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent

Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research

Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.

GB/T 1550 extrinsic conductivity type semiconductor material testing methods

GB/T 1552 silicon germanium crystal measuring resistivity inline four-probe method

GB/T 1555 to the measurement method of a semiconductor single crystal

GB/T 14847 lightly doped silicon epitaxial layer on the substrate thickness infrared reflectance measurements heavily doped

3 PRINCIPLE OF THE METHOD

Spreading resistance method is an experimental comparison. The first method is to measure the spreading resistance is formed through repetition of the contact point, then a calibration curve

Determining the resistivity of the test sample in the vicinity of the contact point of the probe. Spreading resistance R between the conductive metal probe and a reference point of silicon

Potential drop and the ratio of the current flowing through the probe.

For uniform resistivity semiconductor material, the semiconductor material in contact with the probe radius Rao spreading resistance of the formula (1)

She said.

Rs = rho2 Rao (1)

Where.

rho --- resistivity in ohms centimeters (ohm · cm);

Rao --- contact radius, in centimeters (cm);

Rs --- spreading resistance in ohms (ohm).

Equation holds shall meet the following three assumptions.

a) the distance between the two probes must be greater than 10-fold Rao;

b) the resistivity of the sample required uniform;

c) can not form a surface protective film or in contact with the barrier.

May be constant voltage method, a constant current method and logarithmic comparator method, the circuit diagram are shown in Figure 1, Figure 2, Figure 3, the specific formula, respectively, see formula (2), (3) and (4).