GB/T 39145-2020Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry (English PDF)

1 Scope

This standard specifies the method for determining the content of metal elements on the surface of silicon wafers by inductively coupled plasma mass spectrometry.

This standard is applicable to the trace metal sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper and zinc on the surface of polished silicon single crystal wafers and silicon epitaxial wafers.

The determination of the element content is in the range of 108cm-2~1013cm-2.This standard also applies to non-patterned silicon annealing wafers, silicon diffusion wafers, etc.

Determination of trace metal element content on silicon wafer surface.

Note. The metal element content on the surface of the silicon wafer is calculated in the number of atoms per square centimeter.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article

Pieces. For undated references, the latest version (including all amendments) applies to this document.

GB/T 6624 Visual inspection method for surface quality of polished silicon wafer

GB/T 14264 Terminology of Semiconductor Materials

GB/T 17433 Basic terms for chemical analysis of metallurgical products

GB/T 19921 Test method for surface particles of polished silicon wafers

GB/T 25915.1-2010 Clean room and related controlled environment Part 1.Air cleanliness grade

GB/T 37837 Quadrupole Inductively Coupled Plasma Mass Spectrometry Method General

JJF1159 Quadrupole Inductively Coupled Plasma Mass Spectrometer Calibration Specification

SEMIF63 Ultrapure Water Guide for Semiconductor Processing

3 Terms and definitions

The following terms and definitions defined in GB/T 14264, GB/T 17433, GB/T 37837 and JJF1159 apply to this document.