GB/T 29507-2013Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning (English PDF)
硅片平整度、厚度及总厚度变化测试 自动非接触扫描法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
May 9, 2013
Implementation date
February 1, 2014
Scope
GB/T 29507-2013 is the English-translated version of 硅片平整度、厚度及总厚度变化测试 自动非接触扫描法.
GB/T 29507-2013 is the Chinese standard "Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning".
Its scope clause reads: This standard specifies the diameter of not less than 50mm, thickness not less than cutting, grinding 100µm, the corrosion, polishing, epitaxial or other surfaces Wafer flatness state test thickness and total thickness variation.
The standard non-destructive, non-contact automatic scan test method for clean, dry wafer flatness and thickness of the test, and not By the thickness variation of the silicon wafer, the silicon wafer surface state influence and shape. Its clauses include terms and definitions.
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Document preview — GB/T 29507-2013
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 80
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
1 Scope
This standard specifies the diameter of not less than 50mm, thickness not less than cutting, grinding 100µm, the corrosion, polishing, epitaxial or other surfaces
Wafer flatness state test thickness and total thickness variation.
The standard non-destructive, non-contact automatic scan test method for clean, dry wafer flatness and thickness of the test, and not
By the thickness variation of the silicon wafer, the silicon wafer surface state influence and shape.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 14264 semiconductor material terms
3 Terms and Definitions
3.1
GB/T 14264 define the terms and definitions apply to this document.
3.2
Definitions and abbreviations wafer flatness parameters in Table 1.
Abbreviations 1 wafer flatness parameters and definitions abbreviation test method
Datum plane
Datum plane
Plane constituting regions
Test parameters
GB IR (Globalflatnessbacksidereferenceplane idealrange)
The total surface of the back over the back surface quality
Eligible area
TIR GF3R (Globalflatnessfrontsidereferenceplane
3pointsrange)
Plane TIR total of three elements to form the front surface
GF3D (Globalflatnessfrontsidereference3 pointsdeviation)
Datum FPD total front surface composed of three
GFLR (Globalflatnessfrontsidereferenceplane least-squaresrange)
The total surface plane being constituted least squares quality
Eligible area
TIR […]
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
Cited by
- GB/T 44334-2024Silicon epitaxial wafers with buried layers
- GB/T 26069-2022Annealed monocrystalline silicon wafers
- GB/T 41325-2022Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
- GB/T 12964-2018Monocrystalline silicon polished wafers
- GB/T 12965-2018Monocrystalline silicon as cut wafers and lapped wafers
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