GB/T 14140-2025Test method for measuring diameter of semiconductor wafer (English PDF)
半导体晶片直径测试方法
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Issued by
State Administration for Market Regulation; Standardization Administration of China
Level / Type
National · Recommended
Issue date
August 1, 2025
Implementation date
February 1, 2026
Scope
GB/T 14140-2025 is the English-translated version of 半导体晶片直径测试方法.
GB/T 14140-2025 is the Chinese national standard on test method for measuring diameter of semiconductor wafer, in the field of metallurgy. The /T suffix marks it as a recommended standard: it is not compulsory by itself, but it becomes binding as soon as a contract, a tender or a customer specification calls it up - which in practice is how most foreign buyers meet it. It was issued on 1 August 2025 by the State Administration for Market Regulation; Standardization Administration of China, and has been in force since 1 February 2026. Classification: ICS 77.040, CCS H17. This page is published from the official record of the standard held by the Chinese standards administration: the identification, the dates, the classification and the issuing body are taken from there. The clause text, the tables and the numeric limits are in the document itself, which is delivered complete in English translation.
Document preview — GB/T 14140-2025
National Standard of the People's Republic of China
- ICS
- 77.040
- Classification
- H17
Issued by: State Administration for Market Regulation; Standardization Administration of China
Contents
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Profilometer method
- 4.2 Interference Factors
- 4.4 Instruments and Equipment
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part
1.Structure and drafting rules for standardization documents" Drafting. This document replaces GB/T 14140-2009 "Measurement method for diameter of silicon wafers" and GB/T 30866-2014 "Measurement method for diameter of silicon carbide single crystal wafers". This document is based on GB/T 14140-2009 and integrates the contents of GB/T 30866-2014. Compared with.2009, in addition to structural adjustments and editorial changes, the main technical changes are as follows:
a) The optical projection method (see Method 1 of GB/T 14140-2009) has been deleted;
b) The scope has been changed (see Chapter 1, Chapter 1 and Chapter 13 of GB/T 14140-2009);
c) The terms and definitions have been changed (see Chapter 3 and Chapter 15 of GB/T 14140-2009);
d) Added the profilometer method (see Chapter 4);
e) The principle of the micrometer method has been changed (see 5.1, Chapter 16 of GB/T 14140-2009);
f) Added the interference factor of micrometer screw deformation during micrometer testing (see 5.2.5);
g) The diameter test position of the micrometer method has been changed (see 5.6.1,
20.2 of GB/T 14140-2009);
h) The precision of the micrometer method has been changed (see 5.8, Chapter 23 of GB/T 14140-2009);
i) The test report for the micrometer method has been modified (see 5.9, Chapter 24 of GB/T 14140-2009);
j) Added the vernier caliper method (see Chapter 6). Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203). It is jointly proposed and coordinated by the Materials Technical Committee of the Chemical Engineering Technical Committee (SAC/TC203/SC2). This document was drafted by: Maxik Electronic Materials Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Shandong Yanais Semiconductor Materials Co., Ltd., Hangzhou Zhongxin Wafer Semiconductor Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd., Shanghai Xinsheng Semiconductor Technology Co., Ltd., Huzhou Dongni Semiconductor Technology Co., Ltd., Zhejiang Jingsheng Machinery Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd., Guangdong Pioneer Microelectronics Technology Co., Ltd., Qingdao Huaxin Jingdian Technology Co., Ltd. Co., Ltd., Shenzhen Dexin Microelectronics Co., Ltd., Zhejiang Caizi Technology Co., Ltd., Henan Huifeng Diamond Co., Ltd., Hangzhou Langxun Technology Technology Co., Ltd., Hangzhou Xinyun Semiconductor Group Co., Ltd. The main drafters of this document are. Tian Suxia, Chen Weiqun, Li Suqing, Zhang Liang, Shao Qi, Guo Ke, Zhu Xiaotong, Wang Jianghua, Rao Weixing, Zhang Haiying, Feng Tian, Yan Yang, Cao Jianwei, Liu Wei, Xiao Yanqing, Feng Liming, Wang Minghua, Wang Zhiqiang, Xu Zhen, Li Zhikai, and Ding Shengfeng. The previous versions of this document and the documents it replaces are as follows:
--- First published in.1993 as GB/T 14140.1-1993 and GB/T 14140.2-1993;
1 Scope
GB/T 14140-2025 is the Chinese national standard on test method for measuring diameter of semiconductor wafer, in the field of metallurgy. The /T suffix marks it as a recommended standard: it is not compulsory by itself, but it becomes binding as soon as a contract, a tender or a customer specification calls it up - which in practice is how most foreign buyers meet it. It was issued on 1 August 2025 by the State Administration for Market Regulation; Standardization Administration of China, and has been in force since 1 February 2026. Classification: ICS 77.040, CCS H17. This page is published from the official record of the standard held by the Chinese standards administration: the identification, the dates, the classification and the issuing body are taken from there. The clause text, the tables and the numeric limits are in the document itself, which is delivered complete in English translation.
This document describes methods for measuring the diameter of semiconductor wafers using the profilometer, micrometer, and vernier caliper methods. This document is applicable to the test of the diameter of circular semiconductor wafers, and the test range is the nominal diameter not exceeding 300mm. Used to test the out-of-roundness of the wafer.
2 Normative references
The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document.
GB/T 14264 Terminology of Semiconductor Materials
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Profilometer method
4.1 Principles of the Method Place the wafer to be measured on a flat, clean suction cup or wafer edge clamping device and move it between two opposite probes along the specified pattern. The probe scans the surface of the wafer and shines on the test points and the incision position on the edge of the wafer to obtain the data of each point on the edge of the straight line passing through the center point. The diameter of the wafer is obtained by calculating the distances between a series of paired edge points.
4.2 Interference Factors
4.2.1 Wafer cleanliness may interfere with the scanning results and affect the test results.
4.2.2 Wafer edge ripples or unevenness may affect the test results.
4.2.3 Inaccurate equipment calibration will introduce deviations in test results.
4.2.4 The positioning accuracy of the equipment will affect the test location, thereby affecting the location of the sampling point, which may lead to erroneous test results.
4.2.5 Different parameter settings of the test equipment will affect the test results.
4.3 Test conditions The test should be carried out in the following environment.
a) Temperature. 23°C ± 5°C.
b) Relative humidity. (50±20)%.
4.4 Instruments and Equipment
4.4.1 The edge profile tester shall include the following components.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 17 pages — is available in the English PDF.
Referenced standards
Normative references
Cited by
- GB/T 35305-2026Gallium arsenide monocrystals and polished wafers for solar cells
- GB/T 46973-2026Technical specification for high temperature superconducting thin films for microwave passive devices
- GB/T 47097-2026Polished monocrystalline aluminium nitride wafers
- GB/T 47404-2026Monocrystalline silicon carbide
- GB/T 30856-2025GaAs substrates for LED epitaxial chips
- GB/T 30858-2025Polished mono-crystalline sapphire substrate wafers
Similar standards
Editions of GB/T 14140
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 14140-2025 | Test method for measuring diameter of semiconductor wafer | current edition | Current |
| GB/T 14140-2009 | Test method for measuring diameter of semiconductor wafer | previous edition | Superseded |
| GB/T 30866-2014 | Test method for measuring diameter of monocrystalline silicon carbide wafers | merged into this edition | Superseded |
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