GB/T 30858-2025Polished mono-crystalline sapphire substrate wafers (English PDF)

1 Scope

This document specifies the technical requirements, test methods, and inspection procedures for polished sapphire single-crystal substrate wafers (hereinafter referred to as "sapphire substrate wafers").

Rules, markings, packaging, transportation, storage, accompanying documents, and order contents.

This document applies to sapphire substrates with a diameter not exceeding.200 mm. The product is primarily used for the epitaxial growth of semiconductor thin films and the production of sapphire wafers.

Gemstone patterned substrates, sapphire bonded substrates, etc.

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.

For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies.

This document.

GB/T 1031 Product Geometric Specification (GPS) - Surface Roughness Parameters and Their Values Using the Surface Structure Profile Method

GB/T 2828.1-2012 Sampling Procedures for Inspection by Attributes - Part 1.Lot-by-lot Inspection Sampling Indexed by Acceptable Quality Limit (AQL) plan

GB/T 6624 Visual Inspection Method for Surface Quality of Polished Silicon Wafers

GB/T 13387 Method for measuring the length of the reference plane of silicon and other electronic materials wafers

GB/T 14140 Test Method for Diameter of Semiconductor Wafers

GB/T 14264 Semiconductor Materials Terminology

GB/T 19921 Test method for particles on the surface of polished silicon wafers

GB/T 25915.1-2021 Cleanrooms and related controlled environments - Part 1.Classification of air cleanliness levels by particle concentration

GB/T 29505 Method for measuring surface roughness of flat surfaces of silicon wafers

GB/T 30857 Test Method for Thickness and Thickness Variation of Sapphire Substrates

GB/T 31092 Sapphire Single Crystal Rod

GB/T 31352 Test method for warpage of sapphire substrates

GB/T 31353 Test method for bending of sapphire substrate

GB/T 33236 Trace Element Chemical Analysis of Polycrystalline Silicon by Glow Discharge Mass Spectrometry

GB/T 33763 Method for measuring dislocation density in sapphire single crystals

GB/T 34210 Method for determining the crystal orientation of sapphire single crystals

GB/T 34612 Method for measuring rocking curves of X-ray twin diffraction in sapphire crystals

YS/T 26 Inspection Method for Edge Contour of Silicon Wafers

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and GB/T 31092, as well as the following terms and definitions, apply to this document.