GB/T 33236-2016Polycrystalline silicon—Determination of trace elements—Glow discharge mass spectrometry method (English PDF)
多晶硅 痕量元素化学分析 辉光放电质谱法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
December 13, 2016
Implementation date
November 1, 2017
Scope
GB/T 33236-2016 is the English-translated version of 多晶硅 痕量元素化学分析 辉光放电质谱法.
GB/T 33236-2016 is the Chinese standard "Polycrystalline silicon—Determination of trace elements—Glow discharge mass spectrometry method". Its scope clause reads: This standard specifies the use of glow discharge mass spectrometry (GD-MS) method for measuring impurity elements in polysilicon.
This standard applies to polysilicon materials in addition to hydrogen and inert gas elements other than the determination of impurity element content, the measurement range is the Method of detection limit to 0.1% (mass fraction), the detection limit according to the instrument used and measurement conditions to determine.
By correcting the standard sample, It is also possible to measure the impurity element content with a mass fraction greater than 0.1%. Trace impurity elements in monocrystalline silicon materials can also be measured with reference to this standard. Its clauses include normative reference documents; terms and definitions.
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Document preview — GB/T 33236-2016
National Standard of the People's Republic of China
- ICS
- 71.040.40
- Classification
- G 04
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- 1 Scope
- 2 normative reference documents
- 3 terms and definitions
- 3.1 Ion strength
- 3.2 Needle sample sampleample
- 3.3 Flake sample flatsample
- 3.4 Needle-like battery pincel
- 3.5 Chip Discharge Battery Flatcel
1 Scope
This standard specifies the use of glow discharge mass spectrometry (GD-MS) method for measuring impurity elements in polysilicon.
This standard applies to polysilicon materials in addition to hydrogen and inert gas elements other than the determination of impurity element content, the measurement range is the
Method of detection limit to 0.1% (mass fraction), the detection limit according to the instrument used and measurement conditions to determine. By correcting the standard sample,
It is also possible to measure the impurity element content with a mass fraction greater than 0.1%. Trace impurity elements in monocrystalline silicon materials can also be measured with reference to this standard.
2 normative reference documents
The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article
Pieces. For undated references, the latest edition (including all modifications) applies to this document.
GB/T 6682 Analytical laboratory water specifications and test methods
ISO /T S15338..2009 Surface Chemical Analysis Glow Discharge Mass Spectrometry Introduction (Surfacechemicalanalysis-
Glowdischargemassspectrometry (GD-MS) -Introductiontouse)
3 terms and definitions
The following terms and definitions apply to this document.
3.1 Ion strength
The total amount of ion current of the specified element recorded by the instrument.
3.2 Needle sample sampleample
Cross-section round or square needle-like, rod-like or linear sample, usually 20mm in length, cross-section diameter (round) or diagonal (Square) not more than 10mm.
3.3 Flake sample flatsample
Flaky or lumpy specimens, usually circular or square, and at least one side is smooth, smooth surface can form a diameter greater than 10mm
Round measuring surface.
3.4 Needle-like battery pincel
A sample cell for the analysis of needle samples.
3.5 Chip Discharge Battery Flatcel
A sample cell for analyzing a sheet sample.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
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