GB/T 33763-2017Test method for dislocation density of sapphire single crystal (English PDF)

Foreword

This standard is drafted in accordance with the rules given in GB/T 1.1-2009.

1 Scope

This standard specifies the sapphire single crystal dislocation density measurement method.

This standard is applicable to the measurement of the dislocation density of sapphire single crystal with the dislocation density of 0/cm2 ~ 100000/cm2 after polishing, The detection faces are {0001}, {1120}, {1012}, {1010} faces.

2 Normative reference documents

The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this document. For undated references, the latest edition (including all modifications) applies to this document.

GB/T 14264 terminology for semiconductor materials

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 Method summary

The method uses the preferred chemical etching technique to show dislocation. When corroding the crystal surface with some chemical etchant, on the crystal surface Dislocation line outcrop, the corrosion rate is faster, and thus easily formed by some low index surface with angular corners with a specific shape of the corrosion pits. can The dislocation density Nd is identified by the number of corrosion pits per unit area, calculated according to formula (1).

Where: Nd - dislocation density, in units of per square centimeter (per/cm2); n - the number of dislocation lines passing through the field area S, in units of; S - field of view, in square centimeters (cm2).

5 Chemical reagents

5.1 Potassium hydroxide (rho ~ 2.04 g/cm³), analytical grade.

5.2 Sodium hydroxide (rho ~ 2.13 g/cm³), analytical grade.

5.3 Silica (rho ~ 2.2 g/cm³), analytical grade.

5.4 Dilute hydrochloric acid, rho ~ 1.047 g/mL.

6 Equipment

6.1 metallographic microscope. magnification 50 times to 500 times.