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GB/T 30453-2013Metallographs collection for original defects of crystalline silicon (English PDF)

硅材料原生缺陷图谱

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

December 31, 2013

Implementation date

October 1, 2014

Scope

GB/T 30453-2013 is the English-translated version of 硅材料原生缺陷图谱.

GB/T 30453-2013 is the Chinese standard "Metallographs collection for original defects of crystalline silicon".

Its scope clause reads: This standard gives a variety of native defects in polycrystalline silicon, monocrystalline silicon, wafers and epitaxial silicon wafers and other silicon materials and their closely related induced defects Terms and morphology patterns.

Analysis of its causes and elimination methods. This standard applies to testing the production of polycrystalline silicon research, monocrystalline silicon, silicon and epitaxial silicon wafers and other silicon materials in a variety of defects.

Silicon devices, set Research into the production circuit may also refer to this standard. Its clauses include terms and definitions.

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Document preview — GB/T 30453-2013

National Standard of the People's Republic of China

ICS
29.045
Classification
H 80

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • Introduction
  • 1 Scope
  • 2 Normative references
  • 3 Terms and definitions
  • 5 silicon single crystal defects
  • 6 9 silicon processing defects
  • 7 silicon wafer defect
  • Appendix A (informative) hydrogen-induced defects

1 Scope

This standard gives a variety of native defects in polycrystalline silicon, monocrystalline silicon, wafers and epitaxial silicon wafers and other silicon materials and their closely related induced defects

Terms and morphology patterns. Analysis of its causes and elimination methods.

This standard applies to testing the production of polycrystalline silicon research, monocrystalline silicon, silicon and epitaxial silicon wafers and other silicon materials in a variety of defects. Silicon devices, set

Research into the production circuit may also refer to this standard.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein

Member. For undated references, the latest edition (including any amendments) applies to this document.

GB/T 1554 crystallographic perfection of silicon by preferential etch test methods

GB/T 4058 Test Method polished silicon oxide induced defects

GB/T 14264 semiconductor material terms

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.

Incompleteness polycrystalline silicon structure 4

4.1 coarse grains

4.1.1 Characteristics

The trichlorosilane (SiHCl3) or silicon tetrachloride (SiCl4) and hydrogen reduction of silane (SiH4) thermal decomposition grown polycrystalline silicon, dense surface

And crystallite size, and qualified polycrystalline significant differences (see Fig. 1 to 4).

4.1.2 Causes

When the deposition of polycrystalline growth rate too fast, high temperature, easy to produce coarse particles.

4.1.3 The Effect of Single Crystal

Ago to the cleaning process for preparing a single crystal grain material difficult, and become sources of impurities in a single crystal.

4.1.4 Elimination

Reasonable control of the deposition rate, the ratio of the feed control, adjust the gas flow rate.

4.2 Temperature circle

4.2.1 Characteristics

Under normal circumstances, the polycrystalline silicon grains form cross section or radial radiation dendritic growth (see Figure 5). But sometimes it can be observed in the silicon core […]

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 66 pages — is available in the English PDF.

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