GB/T 20228-2021Gallium arsenide single crystal (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.

This document replaces GB/T 20228-2006 Gallium Arsenide Single Crystal. Compared with GB/T 20228-2006, except for structural adjustment and editing In addition to the changes, the main technical changes are as follows.

a) The scope of application of the standard has been changed (see Chapter 1, Chapter 1 of the 2006 edition);

b) Added normative reference document GB/T 13388 (see Chapter 2);

c) Deleted the definition of single crystal and ingot in "Terms and Definitions" (see Chapter 3 of the 2006 edition);

d) The classification by growth method has been deleted (see 4.1.2 in the 2006 edition), and the classification by diameter has been added (see 4.2.2);

e) The representation method of single crystal ingots has been deleted (see 4.3 in the 2006 edition);

f) The "single crystal" and "single crystal ingot" in the original document are unified as "gallium arsenide single crystal" (see Chapter 5, Chapter 5 of the 2006 edition);

g) The size requirements are changed (see 5.1, 5.3.2 of the 2006 edition);

h) The requirements for surface quality have been changed (see 5.2, 5.3.3 of the 2006 edition);

i) The requirements of the reference surface are changed (see 5.3, 5.3.1 of the 2006 edition), and the corresponding content in the test method and inspection rules has been added (See 6.3, Chapter 7);

j) The requirement of crystal orientation deviation has been added (see 5.4);

k) The requirements for Hall mobility and resistivity of non-doped semi-insulating gallium arsenide single crystals are changed (see 5.5, 5.1.2 of the 2006 edition);

l) The requirement for non-uniformity of cross-sectional resistivity (see 5.5) and its calculation method (see 6.5) have been added;

m) The electrical performance requirements of C-doped semi-insulating gallium arsenide single crystal have been added (see 5.5);

n) The requirements for dislocation density have been changed (see 5.6, 5.2 in the 2006 edition);

o) The contents of group batching, inspection items, sampling, and inspection result judgment have been changed (see 7.2~7.4, 7.3~7.5 of the 2006 edition);

p) The content of the accompanying documents has been changed (see 8.5, 8.3 of the 2006 edition);

q) Added "Order Form Content" (see Chapter 9).

1 Scope

This document specifies the technical requirements, test methods, inspection rules, markings, packaging, transportation, storage, accompanying documents and orders for gallium arsenide single crystals. The contents of the manifest.

This document is suitable for liquid-sealed straight pull method (LEC), vertical gradient coagulation method (VGF), vertical Bridgman method (VB) growth, for preparation The gallium arsenide single crystals of optoelectronics, microelectronics and other devices are not suitable for the gallium arsenide single crystals grown by the horizontal Bridgman method (HB).

2 Normative references

The contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document.

GB/T 1555 Method for determination of crystal orientation of semiconductor single crystals

GB/T 4326 Extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method

GB/T 8760 Test method for dislocation density of gallium arsenide single crystal

GB/T 13388 Crystallographic orientation X-ray test method of silicon wafer reference plane

GB/T 14264 Terminology of Semiconductor Materials

GB/T 14844 Semi-conductor material designation method

SJ/T 11488 Semi-insulating gallium arsenide resistivity, Hall coefficient and mobility test method

3 Terms and definitions

The terms and definitions defined in GB/T 14264 are applicable to this document.

4 Grades and classifications

5 Technical requirements