GB/T 8760-2020Test method for dislocation density of monocrystal gallium arsenide (English PDF)

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009.

This standard replaces GB/T 8760-2006 "Measurement Method of Dislocation Density of Gallium Arsenide Single Crystal". This standard and GB/T 8760-2006 In comparison, the main technical changes except for editorial changes are as follows.

---Modified the specified content and scope of application in the scope of the standard (see Chapter 1, Chapter 1 of the 2006 edition);

---Added normative reference documents (see Chapter 2);

--- The terms and definitions of dislocations and dislocation density have been deleted, and the introductory phrase "The terms and definitions defined by GB/T 14264 are applicable to this document" (see Chapter 3, 2006 version 2.1, 2.2);

--- Deleted the content of "using selective optimization corrosion technology to display dislocations" in the principle of the method (see Chapter 4, Chapter 3 of the 2006 edition);

--- Added "Unless otherwise specified, only reagents confirmed to be analytically pure and above are used in the test and analysis, and the resistivity of the water used is not small At 12Mohm·cm" (see Chapter 5);

---The requirements for potassium hydroxide, sulfuric acid and hydrogen peroxide have been revised (see Chapter 5, Chapter 4 of the 2006 edition);

---Modified the requirements of polishing liquid (see 5.4, 5.3 of the 2006 edition);

---Add "platinum crucible or silver crucible" to the equipment (see 6.3);

---Modified the requirements for sample preparation (see Chapter 7, Chapter 5 of the 2006 edition);

---Added the requirements for the field of view area and test point selection when using a metallurgical microscope with digital imaging (see 8.2.2, 8.3.1);

---Added the counting method and topography map when there are many and overlapping dislocation corrosion pits (see 8.4.2);

---The calculation formula in the test data processing uses S-1 instead of C (see Chapter 9, Chapter 8 of the 2006 edition);

--- Revised the chapter title and increased the technical requirements for precision (see Chapter 10, Chapter 9 of the 2006 edition).

This standard is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standard The material sub-committee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed.

Drafting organizations of this standard. Youyan Optoelectronics New Materials Co., Ltd., Yunnan Lincang Xinyuan Germanium Industry Co., Ltd., Guohe General Testing Evaluation and Certification Co., Ltd., the 46th Research Institute of China Electronics Technology Group, Guangdong Leading Thin Material Co., Ltd., Albot (Fujian) New Materials Co., Ltd.

1 Scope

This standard specifies the test method for dislocation density of gallium arsenide single crystal.

This standard is applicable to the measurement of dislocation density of GaAs single crystals on {100} and {111} planes, and the test range is 0cm-2~100000cm-2.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this document. For undated references, the latest version (including all amendments) applies to this document.

GB/T 14264 Terminology of Semiconductor Materials

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 Principle of the method

The lattice around the dislocations in the gallium arsenide single crystal will be distorted. When some chemical etchant is used to corrode the crystal surface, the The corrosion rate of the dislocation outcrop is faster, and then the corrosion pit with a specific shape is formed. Observe under a microscope and count these according to certain rules For corrosion pits with a specific shape, the number of corrosion pits per unit field of view is the dislocation density.

5 Reagents

Unless otherwise specified, only reagents of analytical purity and above are used in the test and analysis, and the resistivity of the water used is not less than 12Mohm·cm.

5.1 Potassium hydroxide (KOH), the mass fraction is not less than 85%.

5.2 Sulfuric acid (H2SO4), the mass fraction is 95% to 98%.

5.3 Hydrogen peroxide (H2O2), the mass fraction is not less than 30%.

5.4 Polishing liquid. a mixed liquid of sulfuric acid, hydrogen peroxide, and water, with a volume ratio of (2~3).1.1, ready to use.

6 Equipment

6.1 Metallurgical microscope, with a magnification of 100 times to 500 times, can meet the requirements of the field of view specified in 8.2.

6.2 The heater can heat potassium hydroxide to a molten and clarified state.

6.3 Platinum crucible or silver crucible.

7 Sample preparation