GB/T 32279-2015Specification for order entry format of silicon wafers (English PDF)

1 Scope

This standard specifies the format requirements and use of the wafer order.

This standard applies to silicon single crystal grinding film, silicon single crystal polishing film, silicon single crystal epitaxial wafers, solar cell silicon single crystal cutting sheet, solar energy

The order form of the polycrystalline silicon wafer for the pool should be used in the order of other semiconductor materials.

2 normative reference documents

The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article

Pieces. For undated references, the latest edition (including all modifications) applies to this document.

GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials

GB/T 1551 silicon single crystal resistivity determination method

GB/T 1553 Photodiode attenuation method for the determination of minority carriers in silicon and germanium bodies

GB/T 1554 silicon crystal integrity chemical selective corrosion test method

GB/T 1555 Semiconductor single crystal crystal orientation method

Measurement of Interstitial Oxygen Content in Silicon Crystal by Infrared Absorption

Determination of Substituted Carbon Atom Content in Silicon by Infrared Absorption

GB/T 4058 Test method for oxidative inducing defects of silicon polishing sheets

GB/T 6618 Wafer thickness and total thickness variation test method

GB/T 6619 Test method for bending of silicon wafers

Non - contact test method for wobble of wafers GB/T 6620

GB/T 6621 wafer surface flatness test method

Test method for surface quality of GB/T 6624 silicon polishing sheet

Methods of measurement of radial resistivity change in silicon wafers GB/T GB/T 12965 silicon single crystal cutting disc and grinding plate

GB/T 13387 Wafer and other electronic material Wafer reference surface length measurement method

GB/T 13388 silicon reference surface crystallographic orientation X - ray test method

GB/T 14139 silicon epitaxial wafers

Method for measuring the diameter of silicon wafers GB/T Test method for crystal integrity of silicon epitaxial layers - Corrosion method GB/T 14142

GB/T 14144 Method for measuring the radial variation of interstitial oxygen content in silicon crystals

GB/T 14264 terminology for semiconductor materials

Measurement of Infrared Reflectance of Light - Doped Silicon Epitaxial Layer on heavily Doped Substrates

Test method for surface particles of silicon polished sheets GB/T 19921

Test Method for Total Reflection X - ray Fluorescence Spectra of Metal Stains on Si/T

GB/T 26068 Non-contact microwave reflection photoconductive attenuation test method for silicon carrier carrier lifetime

GB/T 26071 silicon single crystal cutting sheet for solar cells

GB/T 29055 Polycrystalline silicon wafers for solar cells […]