GB/T 29508-2013300mm monocrystalline silicon as cut slices and grinded slices (English PDF)

1 Scope

This standard specifies the diameter of 300mm, p-type < 100> crystal orientation, resistivity of 0.5ohm · cm ~ 20ohm · cm and a silicon single crystal cut sheet

Grinding sheet (referred to as wafers) terms and definitions of products, technical requirements, test methods, inspection rules and signs, packaging, transportation, storage and so on.

This standard applies to 300mm diameter Czochralski crystal by cutting, grinding circular wafer preparation, the product will be further processed into polished,

For the production of integrated circuits IC substrate sheet with a line width 90nm technology needs.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein

Member. For undated references, the latest edition (including any amendments) applies to this document.

GB/T 1550 extrinsic conductivity type semiconductor material testing methods

GB/T 1551 silicon single crystal resistivity measuring method

GB/T 1554 crystallographic perfection of silicon by preferential etch test methods

GB/T 1555 to the measurement method of a semiconductor single crystal

GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method

GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method

GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan

GB/T 6616 resistivity of semiconductor silicon and silicon thin film sheet resistance test method of non-contact eddy current method

GB/T 6624 polished silicon surface quality by visual inspection

Test Method GB/T 11073 radial resistivity variation on silicon

GB/T 13388 wafer reference surface X-ray crystallographic orientation measurements

GB/T 14140 wafer diameter measuring method

GB/T 14264 semiconductor material terms

GB/T 26067 Test Method wafer notch size

GB/T 29504 300mm silicon single crystal

GB/T 29507 wafer flatness, thickness and total thickness variation of the non-contact testing automatic scanning

YS/T 26 wafer edge profile test methods

Non-contact automatic scan test method SEMIMF1390 of wafer warpage

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.

4. Technical Requirements