GB/T 29504-2013300mm monocrystalline silicon (English PDF)
300mm 硅单晶
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
May 9, 2013
Implementation date
February 1, 2014
Scope
GB/T 29504-2013 is the English-translated version of 300mm 硅单晶.
GB/T 29504-2013 is the Chinese standard "300mm monocrystalline silicon".
Its scope clause reads: This standard specifies the diameter of 300mm, p-type < 100> crystal orientation, resistivity of 0.5ohm · cm ~ 20ohm · cm silicon single crystal of technical requirements, Test methods, inspection rules and signs, packaging, transportation, storage and so on.
This standard applies to a silicon single crystal by the Czochralski prepared mainly for the production of integrated circuits to meet with a line width of 0.13µm and below IC technology 300mm polished silicon single crystal needs surgery. Its clauses include terms and definitions.
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Document preview — GB/T 29504-2013
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 82
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4.1 diameter
- 4.2 Resistivity
1 Scope
This standard specifies the diameter of 300mm, p-type < 100> crystal orientation, resistivity of 0.5ohm · cm ~ 20ohm · cm silicon single crystal of technical requirements,
Test methods, inspection rules and signs, packaging, transportation, storage and so on.
This standard applies to a silicon single crystal by the Czochralski prepared mainly for the production of integrated circuits to meet with a line width of 0.13µm and below IC technology
300mm polished silicon single crystal needs surgery.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1550 extrinsic conductivity type semiconductor material testing methods
GB/T 1551-2009 monocrystalline silicon resistivity measuring method
GB/T 1554 crystallographic perfection of silicon by preferential etch test methods
GB/T 1555 to the measurement method of a semiconductor single crystal
GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method
GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method
Methods of measurement GB/T 11073-2007 radial resistivity variation on silicon
GB/T 14140 wafer diameter measuring method
GB/T 14264 semiconductor material terms
YS/T 679 unsteady surface photovoltage test method intrinsic semiconductor minority carrier diffusion length
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
4. Technical Requirements
4.1 diameter
After a silicon single crystal diameter rounded to 301mm, tolerance ± 0.3mm. Other user requirements and not rounded silicon single crystal diameter and allow
Xu deviation agreed by both parties.
4.2 Resistivity
4.2.1
resistivity silicon single crystal and radial resistivity change should meet the requirements in Table 1.
Table 1 monocrystalline silicon electrical parameters
Item conductive type dopant element
Resistivity
ohm · cm
Radial resistivity change
Index p boron 0.5 ~ 20 <=10 […]
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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