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YS/T 679-2018Test methods for minority carrier diffusion length in extrinsic semiconductors. Surface photovoltage method (English PDF)

非本征半导体中少数载流子扩散长度的测试表面光电压法

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Issued by

Ministry of Industry and Information Technology

Level / Type

National · Recommended

Issue date

October 22, 2018

Implementation date

April 1, 2019

Scope

YS/T 679-2018 is the English-translated version of 非本征半导体中少数载流子扩散长度的测试表面光电压法.

YS/T 679-2018 — This standard specifies the test method for minority carrier diffusion length in extrinsic semiconductor materials, including steady state photovoltage method, constant luminous flux method and digital oscilloscope recording method.

This standard applies to extrinsic semiconductor materials, such as silicon single-wafer or minority-type carrier diffusion in a homogenous epitaxial layer of known resistivity deposited on a reductive substrate of the same conductivity type, test sample (epitaxial) The thickness of the layer) is greater than 4 times the diffusion length.

The limits of resistivity and carrier lifetime of this standard can be tested, but P-type and N-type silicon samples with resistivity of 0.1 ��cm to 50 ��cm and carrier lifetime as short as 2 ns have been tested. .

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Document preview — YS/T 679-2018

National Standard of the People's Republic of China

ICS: 77.040
Classification: H 21
Replacing: YS/T 679-2008

Issued by: Ministry of Industry and Information Technology

What this standard covers1
Document data2

What this standard covers

This standard specifies the test method for minority carrier diffusion length in extrinsic semiconductor materials, including steady state photovoltage method, constant luminous flux method and digital oscilloscope recording method. This standard applies to extrinsic semiconductor materials, such as silicon single-wafer or minority-type carrier diffusion in a homogenous epitaxial layer of known resistivity deposited on a reductive substrate of the same conductivity type, test sample (epitaxial) The thickness of the layer) is greater than 4 times the diffusion length. The limits of resistivity and carrier lifetime of this standard can be tested, but P-type and N-type silicon samples with resistivity of 0.1 ��cm to 50 ��cm and carrier lifetime as short as 2 ns have been tested. . This standard can also calculate the iron content in silicon by testing the diffusion length.

Document data

International classification (ICS): 77.040.

Chinese classification (CCS): H21.

Estimated length of the Chinese original: 26,290 words.

Supersedes the earlier edition YS/T 679-2008.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 17 pages — is available in the English PDF.

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