GB/T 24575-2009Test method for measuring surface sodium, aluminum, potassium, and iron on silicon and epi substrates by secondary ion mass spectrometry (English PDF)

What this standard covers

This standard specifies the silicon and epitaxial wafer surface Na, K and secondary ion mass spectrometry method of Fe, Al. This standard applies to detect Na mirror polished monocrystalline silicon and epitaxial wafer surface by secondary ion mass spectrometry (SIMS), Al, K and Fe total of each metal. This standard test is the total amount of each metal, so the method has nothing to do with the chemical and electrical properties of each metal. This standard applies to all types of doped silicon and dopant concentration. This standard is particularly applicable to the surface of the test piece located on the surface of metal products tainted depth of about 5nm. This standard applies to the surface density range (10^9 ~ 10^(14)) atoms/cm^Na 2 's, Al, tested K and Fe. The detection limit of the method depends on the count rate limit value or a blank, because of different instruments and different.

Document data

International classification (ICS): 29.045.

Chinese classification (CCS): H80.

Estimated length of the Chinese original: 10,186 words.

Adopted international standard: SEMI MF1617-0304, MOD.

Standards quoted by this document

ASTM E673; ASTM E122