GB/T 35306-2023Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.

This document replaces GB/T 35306-2017 "Determination of carbon and oxygen content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy". Compared with GB/T 35306-2017, in addition to structural adjustments and editorial changes, the main technical changes are as follows.

a) Changed the scope of application (see Chapter 1, Chapter 1 of the 2017 edition);

b) The method principle has been changed (see Chapter 4, Chapter 4 of the 2017 edition);

c) Interference factors have been changed (see Chapter 5, Chapter 5 of the 2017 edition);

d) The wavenumber range of the instrument has been changed (see 7.1, 2017 version of 7.1);

e) The requirements for samples and reference samples have been changed (see Chapter 8, Chapter 8 and Chapter 9 of the 2017 edition);

f) Changed the sample thickness requirements (see 9.2, 8.3 of the 2017 version);

g) Added the baseline range, integration range and calibration factor of substituted carbon and interstitial oxygen (see 10.1);

h) Test data processing has been changed (see Chapter 10, Chapter 11 of the 2017 edition);

i) Changed the precision (see Chapter 11, Chapter 12 of the 2017 edition);

j) The absorption peak positions and calibration factors of carbon and oxygen infrared spectra at different temperatures have been deleted (see Appendix A of the 2017 version).

This document was first published in 2017 and this is the first revision.

1 Scope

This document describes a method for determining the substitutional carbon and interstitial oxygen content in silicon single crystals using low-temperature Fourier transform infrared spectroscopy.

This document is applicable to n-type silicon single crystals with room temperature resistivity greater than 1 ohm·cm and p-type silicon single crystals with room temperature resistivity greater than 3 ohm·cm.

For the determination of intermediate carbon and interstitial oxygen content, the measurement range (in terms of number of atoms) is 2.5 x 10^14 cm^-3 ~ 1.5 x 10^17 cm^-3.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.

GB/T 8170 Numerical rounding rules and representation and determination of limit values

GB/T 8322 Molecular absorption spectrometry terminology

GB/T 14264 Semiconductor material terminology

GB/T 29057 Procedure for evaluating polycrystalline silicon rods using zone melting crystal pulling method and spectral analysis method

3 Terms and definitions

The terms and definitions defined in GB/T 8322 and GB/T 14264 and the following apply to this document.

4 Method Principle

Cool the silicon single crystal sample to a temperature below 15K, and collect the background, reference and sample transmission spectra, reference spectrum and sample light respectively. […]