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GB/T 24574-2009Test methods for photoluminescence analysis of single crystal silicon for III-V impurities (English PDF)

硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法

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Issued by

Standardization Administration of China

Level / Type

National · Recommended

Issue date

October 30, 2009

Implementation date

June 1, 2010

Scope

GB/T 24574-2009 is the English-translated version of 硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法.

GB/T 24574-2009 — This standard specifies the test methods photoluminescent silicon single crystal III-V family impurities. This standard applies to the determination of low dislocation single crystal silicon conductive impurity of boron and phosphorus content at the same time.

The standard for the detection of single crystal silicon in an amount of 1 × 1011at · cm-3 ~ 5 × various electrically active impurity elements 1015at · cm-3's.

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Document preview — GB/T 24574-2009

National Standard of the People's Republic of China

ICS: 29.045
Classification: H 80

Issued by: Standardization Administration of China

What this standard covers1
Document data2
Standards quoted by this document3

What this standard covers

This standard specifies the silicon single product in ��-�� photoluminescence testing methods ethnic impurities. This standard applies to the determination of low dislocation single crystal silicon impurity conductivity of boron and phosphorus content simultaneously. This standard is used to detect a single product silicon content of 1 �� 10^(11) at �� cm^(-3) ~ 5 �� 10^(15) at �� cm^(-3) for a variety of electrically active impurity elements.

Document data

International classification (ICS): 29.045.

Chinese classification (CCS): H80.

Estimated length of the Chinese original: 12,122 words.

Adopted international standard: SEMI MF1389-0704, MOD.

Standards quoted by this document

GB/T 13389; GB/T 24581

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 8 pages — is available in the English PDF.

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