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GB/T 46227-2025Test method for transmittance of semiconductor single crystal materials (English PDF)

半导体单晶材料透过率测试方法

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

August 29, 2025

Implementation date

March 1, 2026

Scope

GB/T 46227-2025 is the English-translated version of 半导体单晶材料透过率测试方法.

GB/T 46227-2025 is the Chinese national standard covering how much light a semiconductor crystal lets through — the spectral range and the specimen thickness and finish, the reflection losses that have to be separated from the absorption, and the transmittance curve that reveals the free carrier concentration and the impurities. First edition, in force from 1 March 2026. Issued on 29 August 2025, it has been in force since 1 March 2026.

Document preview — GB/T 46227-2025

National Standard of the People's Republic of China

ICS: 77.040
Classification: H 21

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Foreword
1 Scope
2 Normative references
3 Terms and Definitions
3.1 transmittance
3.2
3.3 background spectrumbackgroundspectrum
3.4 sample spectrum samplespectrum
4 Principles of the Method

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.

This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203).

It is jointly proposed and coordinated by the Materials Technical Committee of the Chemical Engineering Technical Committee (SAC/TC203/SC2).

This document was drafted by: China Electronics Technology Group Corporation No. 46 Research Institute, Nonferrous Metals Technology and Economic Research Institute Co., Ltd.

Company, Jiangsu Third Generation Semiconductor Research Institute Co., Ltd., Songshan Lake Materials Laboratory, New Micron (Suzhou) Semiconductor Technology Co., Ltd., Jinghui New Materials Co., Ltd., Anhui Guangzhi Technology Co., Ltd., Tiantong Yinxia New Materials Co., Ltd., Guangdong Xiandao Microelectronics Technology Co., Ltd.

Co., Ltd., China Electronics Jinghua (Tianjin) Semiconductor Materials Co., Ltd., the 13th Research Institute of China Electronics Technology Group Corporation, Nanjing Shengxin Semiconductor Materials Co., Ltd., Shandong Youyan Semiconductor Materials Co., Ltd., Shandong Tianyue Advanced Technology Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd.

Company, Beijing Tianke Heda Semiconductor Co., Ltd., Yunnan Chihong International Germanium Industry Co., Ltd., Hangzhou Gallen Semiconductor Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Yongjiang Laboratory Microspectroscopy (Zhejiang) Technology Service Co., Ltd., Kunshan HiFiMan Technology Group Co., Ltd.

Company, Henan Zhongyi Chuangxin Development Co., Ltd.

The main drafters of this document are: Li Jing, He Xuankun, Li Suqing, Xu Rong, Qi Haitao, Suo Kainan, Hu Wei, Wang Yingming, Qi Xingwang, Ou Linfang, Hao Wenjuan, Sun Xuefeng, Li Mingda, Wang Yang, Wang Yinhai, Xia Qiuliang, Zhu Xiaotong, Zhang Hongyan, Ding Xiongjie, She Zongjing, Kuang Zideng, Xia Ning, Shen Yijun, Wu Jie, Bian Fang, Sun Yi, and Li Huanhuan.

Semiconductor single crystal material transmittance test method

1 Scope

This document describes the method for measuring the transmittance of semiconductor single crystal materials in the wavelength range of 0.2µm to 300µm.

This document applies to semiconductor units such as silicon, germanium, indium phosphide, cadmium selenide, cadmium sulfide, silicon carbide, gallium nitride, gallium oxide, sapphire, and diamond.

Determination of transmittance of crystal materials.

2 Normative references

GB/T 8170

GB/T 13962

GB/T 14264

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and GB/T 13962 and the following apply to this document.

3.1 transmittance

Transmittance The percentage of the luminous flux transmitted when light passes through the sample to the initial luminous flux.

3.2

Transmittance distribution within a certain area of the sample.

3.3 background spectrumbackgroundspectrum

In an infrared spectrometer, the spectral lines obtained are measured in the absence of a sample.

Note. This usually includes information such as air or nitrogen purge.

3.4 sample spectrum samplespectrum

The spectrum obtained by subtracting the background spectrum from the spectrum of the measured sample.

Note. When using a double-beam instrument, place the sample in the sample light path and leave the reference light path empty; when using a Fourier transform infrared spectrometer and a single-beam spectrometer The background spectrum is subtracted from the spectrum of the measured sample.

4 Principles of the Method

When infrared light, visible light, and ultraviolet light of a certain frequency pass through a semiconductor single crystal, due to the intrinsic absorption, surface scattering, and internal

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

Normative references

Editions of GB/T 46227

Edition	Title	Revision	Status
GB/T 46227-2025	Test method for transmittance of semiconductor single crystal materials	current edition	Current

This page sells the current edition, GB/T 46227-2025. Earlier editions are listed for reference only.

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