GB/T 3859.2-2013Semiconductor converters -- General requirements and line commutated converters -- Part 1-2: Application guide (English PDF)

Foreword

GB/T 3859 "Semiconductor Converter" is divided into the following parts.

---Part 1-1.Basic requirements and specifications;

---Part 1-2.Application Guidelines;

---Part 1-3.Transformers and reactors;

---Part 2: Semiconductor self-commutated converter including direct DC converter.

This part is Part 1-2 of GB/T 3859.

This section was drafted in accordance with the rules given in GB/T 1.1-2009.

This part replaces GB/T 3859.2-1993 "Semiconductor Converter Application Guidelines".

Compared with GB/T 3859.2-1993, the main technical changes in this part are as follows.

---Modified the standard name;

---Adjusted the text structure to make it consistent with IEC/T R60146-1-2.2011 as much as possible;

--- Deleted the "subject content" and revised the "scope of application" (see Chapter 1, Chapter 1 of the 1993 edition);

---Adjusted the "cited documents" (see Chapter 2, Chapter 2 of the 1993 edition);

---Adjusted and revised "Terms and Definitions" (see Chapter 3, Chapter 3 of the 1993 edition);

--- Deleted Chapter 4 "Converter Marking" of the 1993 edition, and the relevant content is stipulated in GB/T 3859.1-2013;

---Modified "application field of the converter", "main technical parameters of the converter", "parallel and series connection" and "environmental conditions and converter Safe operation" (see 4.1, 4.2, 4.5 and 4.12, 5.1, 5.2, 5.4 and 5.11 of the 1993 edition);

---Added "converter transformer and reactor" and "overvoltage protection" (see 4.3 and 4.11);

---Modified "commutation gap" and "harmonic content of DC voltage" (see 5.4.1 and 5.7, and 6.5.1 and 6.4 in 1993 edition);

---Added "fault current protection" (see 9.3);

---Added "several over-voltage protection measures" (see Appendix A);

--- Deleted the "anti-interference performance of the trigger device" and the calculation formula for the ideal grid-side harmonic current of the converter (the 5.12 and 6.6.2.1);

--- Deleted "The operation of the converter when the ambient temperature and the temperature of the cooling medium are higher than the specified value" "When the converter is used in high altitude areas" Correction of current capacity" and "temperature of the converter without exposure to operation" (1993 edition appendix A, appendix B and appendix C).

This part uses the redrafting law to amend and adopt IEC/T R60146-1-2.2011 "General requirements for semiconductor converters and power grid commutation Converter Part 1-2.Application Guidelines.

Compared with IEC/T R60146-1-2.2011, this part adds 4 articles (3.4, 4.11~4.12) and an appendix (Appendix A), and adjust 4.2.1 and 4.2.3.1 in IEC/T R60146-1-2.2011 to 4.2.1, 4.2.3.2 to 4.2.2.1, 4.2.3.3 adjusted to 4.2.2.2, 4.2.3.4 adjusted to 4.2.2.3, 4.2.3.5 adjusted to 4.2.2.4, 4.2.4 adjusted to 4.2.3, 5.10.1 and 5.10.2 are adjusted to 5.10.1, 5.10.3 is adjusted to 5.10.2, and 7.4 is adjusted to 4.10.

The technical differences between this part and IEC/T R60146-1-2.2011 and the reasons are as follows.

---According to the actual citation in the standard provisions, some normative citation documents have been added (see Chapter 2);

---Added "terms related to harmonics" (see 3.4);

---Modified "application area" and "output-related parameters" (see 4.1 and 4.2.2.2);

---Added formulas applicable to non-uniform connection and asymmetric control (see 4.6.4.2);

--- Added "overvoltage protection" and "impact of environmental conditions on converter operation" (see 4.11 and 4.12);

--- In Table 10, the calculated value of the notch depth of the transformer is corrected to "0.0331", and the calculated value of the notch depth on the grid side is corrected to "0.0332".

This section made the following editorial changes. Added informative Appendix A "Several Overvoltage Protection Measures".

This part was proposed by China Electrical Equipment Industry Association.

This part is under the jurisdiction of the National Power Electronics Standardization Technical Committee (SAC/TC60).

Drafting organizations of this section. Xi'an Power Electronics Technology Research Institute, Xiamen Kehua Hengsheng Co., Ltd., Guangdong Zhicheng Champion Group Co., Ltd.

Company, Baoding Wright Rectifier Co., Ltd., Suzhou Dentsu Power Electronics Co., Ltd., Qingdao Economic and Technological Development Zone Chuangtong Technology Development Co., Ltd., Wolong Electric Group Beijing Huatai Transformer Co., Ltd., Beijing Jinzi Tianzheng Intelligent Control Co., Ltd.

1 Scope

This section gives guidelines for the application of the basic requirements and specifications covered by GB/T 3859.1 in different situations, so that GB/T 3859.1 the regulations are adapted to special applications in a controllable form. To facilitate the use of GB/T 3859.1, background information is given at key technical points.

This section mainly covers the power grid commutating converter. As far as current standards cannot provide necessary information, this part itself is not a standard (Unless some accessories are involved).

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated references, the latest version (including all amendments) applies to this document.

GB/T 2900.33-2004 Electrical Terminology Power Electronic Technology (IEC 60050-551:1998, IDT) GB/T 3859.1-2013 General requirements for semiconductor converters and power grid commutated converters Part 1-1.Basic requirements specification (IEC 60146-1-1:2009, MOD) GB/T 3859.3-2013 General requirements for semiconductor converters and power grid commutated converters Part 1-3.Transformers and reactors (IEC 60146-1-3:1991, MOD) GB 4208 enclosure protection grade (IP code) (GB 4208-2008, IEC 60529:2001, IDT) GB/T 10236 Guidelines for Compatibility and Interference Protection of Semiconductor Converter and Power Supply System GB/T 16935.1-2008 Insulation coordination of equipment in low-voltage systems Part 1: Principles, requirements and tests (GB/T 16935.1-2008, IEC 60664-1:2007, IDT) GB/T 17950 Semiconductor converter Part 6: Application guidelines for using fuses to protect semiconductor converters against overcurrent (GB/T 17950-2000, idtIEC 60146-6.1992) GB/T 18494.1 Converter Transformer Part 1: Industrial Converter Transformer (GB/T 18494.1-2001, idt IEC 61378-1:1997)

3 Terms and definitions

The following terms and definitions defined in GB/T 2900.33 and GB/T 3859.1 apply to this document. For ease of use, the following Some terms and definitions in GB/T 2900.33 and GB/T 3859.1 are repeatedly listed.