GB/T 1551-1995Test method for resistivity of silicon and germanium bars using a two-point probe (English PDF)
硅、锗单晶电阻率测定 直流两探针法
GB/T 1551 | Evolution and historical versions
| Std ID | Title | Status |
|---|---|---|
| GB/T 1551-2021 | Test method for measuring resistivity of monocrystal silicon - In-line four-point probe and direct current two-point probe method | Valid |
| GB/T 1551-2009 | Test method for measuring resistivity of monocrystal silicon | Obsolete |
| GB/T 1551-1995 | Test method for resistivity of silicon and germanium bars using a two-point probe | Obsolete |
GB/T 1551-1995 is obsolete. It has been replaced by GB/T 1551-2009. This page sells the obsolete edition, for projects and contracts that still cite it.
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Issued by
State Bureau of Technical Supervision
Level / Type
National · Recommended
Issue date
April 18, 1995
Implementation date
December 1, 1995
Scope
GB/T 1551-1995 is the English-translated version of 硅、锗单晶电阻率测定 直流两探针法.
GB/T 1551-1995 is the Chinese national standard "Test method for resistivity of silicon and germanium bars using a two-point probe". It was issued on April 18, 1995 by the State Bureau of Technical Supervision, and took effect on December 1, 1995. It is obsolete: it has been replaced by GB/T 1551-2009.
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Document preview — GB/T 1551-1995
National Standard of the People's Republic of China
Issued by: State Bureau of Technical Supervision
Contents
- Document data
1 Document data
Sector: National standard (Recommended).
Issuing body: State Bureau of Technical Supervision.
Date of issue: 1995-04-18.
Date of implementation: 1995-12-01.
Status: obsolete, replaced by GB/T 1551-2009.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
Referenced standards
Cited by
- GB/T 11073-2025Test method for measuring radial resistivity variation on silicon wafers
- GB/T 45130-2025Aluminium-doped zinc oxide sputtering targets
- GB/T 46611-2025Lithium niobate single-crystal thin film for electro-optic modulators
- GB/T 20510-2024Indium tin oxide targets
- GB/T 1553-2023Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method
- GB/T 29057-2023Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
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