GB/T 4060-2018Test method for boron content in polycrystalline silicon by vacuum zone-melting method (English PDF)

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009.

This standard replaces GB/T 4060-2007 "Silicon polycrystalline vacuum zone melting boron test method", compared with GB/T 4060-2007, except The main technical changes outside the series are as follows.

--- Added normative references GB/T 620-2011, GB/T 626-2006, GB/T 11446.1-2013, GB/T 25915.1-2010 (see Chapter 2);

--- Revised the method summary, and changed the words "after melting and melting 14 times in the speed zone of 1.0mm/min" to "not higher than 1.0mm/min" After the speed has been refined and purified several times (see Chapter 4, Chapter 4 of the 2007 edition);

---In the interference factor, the purity of the pickling vessel, acid and deionized water, corrosion rate, corrosion temperature, and sample exposure are added. Both may cause contamination and should be controlled" (see 5.4);

--- Removed the requirements and test environment for the single crystal after melting in the interference factor (see 5.6, 5.7 of 2007 edition);

---In the reagents and materials, the "p-type resistivity of not less than 3000 ohm · cm seed crystal" was modified to "the seed crystal should be a dislocation-free P type < 111> High-resistance silicon single crystal, and the content of the acceptor impurity (atomic number) is less than 2.5 × 10 12 cm -3, and the carbon content (number of atoms) is less than 5 x 10^15cm-3, the crystal orientation deviation is less than 5°" (see 6.4, 6.1 of 2007 edition);

--- In the instrument and equipment, the "coring device" was modified to "coring device, which can drill a diameter of about 15mm~20mm and the length is not small. 100mm polycrystalline silicon core" [see 7.1, 2007 edition of 7a)];

--- Added two probe or four probe resistivity tester (see 7.6);

--- Increased test environment (see Chapter 8);

--- In the sampling, "parallel to the silicon core drilled about 180mm long, the diameter of the sample is about 15mm~20mm for the sample" modified For "parallel to the silicon core, drill a sample with a length of not less than 100mm and a diameter of 15mm~20mm as a sample" (see 9.2, 2007) Version 8.2);

--- The distance between the core of the sample and the bottom of the polycrystalline silicon rod is changed from "not less than 50mm" to "not less than 250mm" (see 9.4, 8.4 of 2007 edition);

--- Removed "Select resistivity greater than 3000 ohm · cm, carbon content less than 0.2 x 10^-6, no dislocations, crystal orientation deviation less than 5 ° P-type < 111> high-resistance silicon single crystal cut seed crystal prepared" (see 2007 edition of 10.1.1);

---In the zone melt-drawing step added "after the completion of the first and second purification, each time retaining the tail of a melting zone length, the third time Start the fixed zone melt length" (see 11.4).

This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.

The Technical Subcommittee of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.

1 Scope

This standard specifies the test method for the boron content of polysilicon.

This standard applies to the determination of the boron content of the polycrystalline silicon rod deposited on the silicon core. The boron content (atomic number) is determined in the range of 0.01 x 10^13 cm-3~5 x 10^15 cm-3.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this document. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 620-2011 chemical reagent hydrofluoric acid

GB/T 626-2006 chemical reagent nitric acid

GB/T 1551 silicon single crystal resistivity determination method

GB/T 1554 silicon crystal integrity chemical selective corrosion test method

GB/T 1555 semiconductor single crystal orientation determination method

GB/T 11446.1-2013 electronic grade water

GB/T 13389 boron-doped phosphorus-doped arsenic-doped silicon single crystal resistivity and dopant concentration conversion procedure

GB/T 14264 semiconductor material terminology

GB/T 25915.1-2010 Clean rooms and related controlled environments - Part 1: Air cleanliness

3 Terms and definitions

The following terms and definitions as defined in GB/T 14264 apply to this document.

4 Method summary

In a zone furnace with a vacuum of not less than 1.33 x 10^-2 Pa, the zone is melted and purified at a speed not higher than 1.0 mm/min.