GB/T 43366-2023General specification for discrete semiconductor devices of space application (English PDF)
宇航用半导体分立器件通用规范
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
November 27, 2023
Implementation date
March 1, 2024
Scope
GB/T 43366-2023 is the English-translated version of 宇航用半导体分立器件通用规范.
GB/T 43366-2023 is the Chinese standard "General specification for discrete semiconductor devices of space application".
Its scope clause reads: This document specifies the general requirements, quality assurance regulations, delivery preparation and instructions for aerospace semiconductor discrete devices (hereinafter referred to as "devices"): Matters needing attention: This document applies to the design, production, inspection and sales of semiconductor discrete devices for aerospace use:. Its clauses include normative reference documents.
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Document preview — GB/T 43366-2023
National Standard of the People's Republic of China
- ICS
- 49.035
- Classification
- V 25
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Preface
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Technical requirements
- 5 Test methods
- 6 Inspection Rules
- 7 Packaging, labelling, transportation and storage
- Appendix A (Normative) Material Requirements
- Appendix B (informative) User supervision
- Appendix C (informative) User acceptance
1 Scope
This document specifies the general requirements, quality assurance regulations, delivery preparation and instructions for aerospace semiconductor discrete devices (hereinafter referred to as "devices"):
Matters needing attention:
This document applies to the design, production, inspection and sales of semiconductor discrete devices for aerospace use:
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text: Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document:
GB/T 4023-2015 Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes
GB/T 4586-1994 Semiconductor devices Discrete devices Part 8: Field effect transistors
GB/T 4587-1994 Semiconductor discrete devices and integrated circuits Part 7: Bipolar transistors
GB/T 4589:1-2006 Semiconductor discrete devices Part 10: General specifications for discrete devices and integrated circuits
GB/T 4937:2-2006 Mechanical and climatic test methods for semiconductor devices Part 2: Low pressure
GB/T 4937:3-2012 Mechanical and climatic test methods for semiconductor devices Part 3: External visual inspection
GB/T 4937:4-2012 Mechanical and climatic test methods for semiconductor devices Part 4: Strongly accelerated steady-state damp heat test (HAST)
GB/T 4937:11-2018 Mechanical and climatic test methods for semiconductor devices Part 11: Rapid temperature change double liquid slot method
GB/T 4937:12-2018 Mechanical and climatic test methods for semiconductor devices Part 12: Sweeping vibration
GB/T 4937:13-2018 Mechanical and climatic test methods for semiconductor devices Part 13: Salt spray
GB/T 4937:14-2018 Mechanical and climatic test methods for semiconductor devices Part 14: Terminal strength (leads are secure sex)
GB/T 4937:15-2018 Mechanical and climatic test methods for semiconductor devices Part 15: Solder resistance of through-hole mounting devices
Receive heat
GB/T 4937:18-2018 Mechanical and climatic test methods for semiconductor devices Part 18: Ionizing radiation (total dose)
GB/T 4937:19-2018 Mechanical and climatic test methods for semiconductor devices Part 19: Chip shear strength
GB/T 4937:20-2018 Mechanical and climatic test methods for semiconductor devices Part 20: Moisture resistance of plastic-encapsulated surface-mounted devices
Combined effects of moisture and welding heat
GB/T 4937:21-2018 Mechanical and climatic test methods for semiconductor devices Part 21: Solderability
GB/T 4937:22-2018 Mechanical and climatic test methods for semiconductor devices Part 22: Bonding strength
GB/T 4937:30-2018 Mechanical and climatic test methods for semiconductor devices Part 30: Non-sealed surface mount devices in
Preprocessing before reliability test
GB/T 15291-2015 Semiconductor devices Part 6: Thyristors
GB/T 19403:1-2003 Semiconductor device integrated circuits Part 11: Part 1: Internal visual inspection of semiconductor integrated circuits […]
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 37 pages — is available in the English PDF.
Referenced standards
Normative references
- GB/T 4023-2015Discrete semiconductor devices - Part 1: Sectional specification
- GB/T 4586-1994Semiconductor devices Discrete devices. Part 8: Field-effect transistors
- GB/T 4587-1994Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- GB/T 4589.1-2006Semiconductor devices -- Part 10: Generic specification for discrete devices and integrated circuits
- GB/T 4937.2-2006Semiconductor devices -- Mechanical and climatic test methods -- Part 2: Low air pressure
- GB/T 4937.3-2012Semiconductor devices -- Mechanical and climatic tests methods -- Part 3: External visual examination
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Related Standards
GB/T 15291-2015 — Semiconductor devices -- Part 6: Thyristors
GB/T 19403.1-2003 — Semiconductor devices -- Integrated Circuits -- Part 11: Section 1: Internal visual examination for semiconductor integrated circuit (excluding hybrid circuits)
GB/T 4023-2015 — Discrete semiconductor devices - Part 1: Sectional specification
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GB/T 43366-2023
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